NVMFD5853NLT1G
- Manufacturer's Part No.:NVMFD5853NLT1G
- Manufacturer:
- Categories:
- Sub-Categories:
- Series:-
- Description:MOSFET 2N-CH 40V 12A SO8FL
- Datasheet:
- Quantity:RFQAdd to RFQ List
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- Available: 132119
Reference Price(In US Dollars)
Qty | Unit Price | Ext.Price |
---|---|---|
1+ | US $1.93050 | US $1.93 |
10+ | US $1.28700 | US $12.87 |
30+ | US $0.96525 | US $28.96 |
100+ | US $0.77220 | US $77.22 |
500+ | US $0.70785 | US $353.93 |
1000+ | US $0.64350 | US $643.50 |
Do you want a lower wholesale price? Please send us an inquiry, and we will respond immediately.
Product Parameter
- ManufacturerON Semiconductor
- Manufacturer's Part No.NVMFD5853NLT1G
- CategoriesDiscrete Semiconductor Products
- Sub-CategoriesTransistors - FETs, MOSFETs - Arrays
- Series-
- ECCNEAR99
- Width5.1mm
- Height1.05mm
- Length6.1mm
- FET Type2 N-Channel (Dual)
- Lead FreeLead Free
- PackagingTape & Reel (TR)
- Pin Count8
- Published2013
- FET FeatureLogic Level Gate
- Part StatusNot For New Designs
- Pbfree Codeyes
- SubcategoryFET General Purpose Power
- Halogen FreeHalogen Free
- REACH StatusREACH Unaffected
- Mounting TypeSurface Mount
- Surface MountYES
- Terminal FormFLAT
- FET TechnologyMETAL-OXIDE SEMICONDUCTOR
- Number of Pins8
- Operating ModeENHANCEMENT MODE
- Package / Case8-PowerTDFN
- Case ConnectionDRAIN
- Terminal FinishTin (Sn)
- Lifecycle StatusACTIVE, NOT REC (Last Updated: 2 days ago)
- Factory Lead Time13 Weeks
- Number of Elements2
- Reference StandardAEC-Q101
- Turn On Delay Time10 ns
- Vgs(th) (Max) @ Id2.4V @ 250μA
- Radiation HardeningNo
- Turn-Off Delay Time22 ns
- Element ConfigurationDual
- Max Power Dissipation3W
- Operating Temperature-55°C~175°C TJ
- Number of Terminations6
- Rds On (Max) @ Id, Vgs10m Ω @ 15A, 10V
- Transistor Element MaterialSILICON
- Drain Current-Max (Abs) (ID)34A
- Gate Charge (Qg) (Max) @ Vgs23nC @ 10V
- Gate to Source Voltage (Vgs)20V
- Avalanche Energy Rating (Eas)40 mJ
- Continuous Drain Current (ID)12A
- Drain to Source Voltage (Vdss)40V
- Drain-source On Resistance-Max0.015Ohm
- Pulsed Drain Current-Max (IDM)165A
- Drain to Source Breakdown Voltage40V
- Input Capacitance (Ciss) (Max) @ Vds1100pF @ 25V
Environmental & Export Classifications
- HTSUS8541.29.0095
- ECCN CodeEAR99
- RoHS StatusROHS3 Compliant
- JESD-30 CodeR-PDSO-F6
- JESD-609 Codee3
- Moisture Sensitivity Level (MSL)1 (Unlimited)
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