NVMFS5A160PLZT1G

The NVMFS5A160PLZT1G is a power MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) manufactured by ON Semiconductor. This device is designed for high-efficiency switching applications, making it suitable for various power management tasks in electronic circuits.

Key Features:

1. Type: N-channel MOSFET

   • The N-channel configuration allows for efficient conduction and is commonly used in power applications due to its lower on-resistance compared to P-channel devices.

2. Voltage Rating:

   • The NVMFS5A160PLZT1G has a maximum drain-source voltage (V_DS) rating of 60V, which makes it suitable for applications that require handling moderate voltage levels.

3. Current Rating:

   • It can handle a continuous drain current (I_D) of up to 30A, which is beneficial for high-current applications, such as power supplies and motor drivers.

4. On-Resistance:

   • The device features a low on-resistance (R_DS(on)) value, typically around 10 mΩ at a gate-source voltage (V_GS) of 10V. This low resistance minimizes power losses during operation, enhancing overall efficiency.

5. Gate Threshold Voltage:

   • The gate threshold voltage (V_GS(th)) is typically in the range of 1V to 3V, allowing for easy drive with standard logic levels.

6. Package Type:

   • The NVMFS5A160PLZT1G is available in a compact SO-8 package, which is suitable for surface-mount applications. This package type helps in saving board space and improving thermal performance.

7. Thermal Characteristics:

   • The device is designed to operate efficiently at elevated temperatures, with a maximum junction temperature (T_J) rating of 150°C. This allows for reliable operation in demanding environments.

8. Applications:

   • Common applications include DC-DC converters, power management systems, motor control circuits, and other high-frequency switching applications.

9. RoHS Compliance:

   • The NVMFS5A160PLZT1G is compliant with RoHS (Restriction of Hazardous Substances) standards, making it an environmentally friendly choice for modern electronic designs.

Performance Characteristics:

• Switching Speed: The device is optimized for fast switching, which is crucial for applications requiring rapid on/off control.
• Safe Operating Area (SOA): The MOSFET is designed to operate within a specified safe operating area, ensuring reliability and preventing damage during operation.

Conclusion:

The NVMFS5A160PLZT1G from ON Semiconductor is a versatile and efficient N-channel MOSFET suitable for a wide range of power applications. Its combination of high current handling, low on-resistance, and compact packaging makes it an excellent choice for designers looking to optimize performance in their electronic circuits.