NVMFS6H800NT1G
- Manufacturer's Part No.:NVMFS6H800NT1G
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- Series:Automotive, AEC-Q101
- Description:TRENCH 8 80V NFET
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- In Stock: 12300
- Available: 5400
Reference Price(In US Dollars)
Qty | Unit Price | Ext.Price |
---|---|---|
1+ | US $4.38000 | US $4.38 |
10+ | US $3.94200 | US $39.42 |
30+ | US $3.06600 | US $91.98 |
100+ | US $2.51850 | US $251.85 |
500+ | US $2.40900 | US $1204.50 |
1000+ | US $2.19000 | US $2190.00 |
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The NVMFS6H800NT1G is a power MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) manufactured by ON Semiconductor. It is designed for high-efficiency applications, particularly in power management and switching applications. Here’s a detailed description of its key features and specifications:
General Characteristics:
- Type: N-channel MOSFET
- Package: Typically available in a TO-220 or similar package, which allows for efficient heat dissipation and easy mounting on PCBs.
- Configuration: Single MOSFET configuration.
Electrical Specifications:
- Drain-Source Voltage (V_DS): The NVMFS6H800NT1G can handle a maximum drain-source voltage of 800V, making it suitable for high-voltage applications.
- Continuous Drain Current (I_D): It has a continuous drain current rating of up to 6A at a specified temperature, allowing it to handle significant loads.
- Pulsed Drain Current (I_D, pulsed): The device can handle higher pulsed currents, which is useful in applications where short bursts of high current are required.
- Gate Threshold Voltage (V_GS(th)): The gate threshold voltage typically ranges from 2V to 4V, indicating the voltage required to turn the MOSFET on.
- R_DS(on): The on-resistance is low, typically around 0.5 ohms at a specified gate voltage, which minimizes power loss during operation.
Thermal Characteristics:
- Junction-to-Case Thermal Resistance (RθJC): This parameter indicates how effectively the device can dissipate heat. A lower value is preferable for high-power applications.
- Operating Temperature Range: The device is rated for operation in a wide temperature range, typically from -55°C to +150°C, making it suitable for various environmental conditions.
Switching Characteristics:
- Turn-On and Turn-Off Times: The NVMFS6H800NT1G features fast switching times, which are critical for applications requiring rapid on/off cycling, such as in switch-mode power supplies (SMPS) and motor control circuits.
Applications:
- Power Supplies: Ideal for use in high-voltage power supplies, including AC-DC converters and DC-DC converters.
- Motor Drives: Suitable for driving motors in industrial and consumer applications.
- Lighting: Can be used in LED drivers and other lighting applications where efficient power management is essential.
- Automotive: Its high voltage rating makes it suitable for automotive applications, including electric vehicles and hybrid systems.
Additional Features:
- Avalanche Rated: The device is designed to handle avalanche conditions, providing additional reliability in transient situations.
- Low Gate Charge (Q_g): This characteristic allows for lower drive power requirements, making it easier to control with standard gate drivers.
Conclusion:
The NVMFS6H800NT1G from ON Semiconductor is a robust and versatile N-channel MOSFET that excels in high-voltage and high-efficiency applications. Its combination of high voltage rating, low on-resistance, and fast switching capabilities makes it an excellent choice for engineers looking to design reliable and efficient power electronic systems.
Functional Equivalent (FE) materials, including Fused Filament Fabrication (FFF) form, assembly, and functionally compatible substitute materials.
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