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NVTFS5116PLTWG

  • In Stock: 627
  • Available: 1889

Reference Price(In US Dollars)

QtyUnit PriceExt.Price
1+US $3.16000US $3.16
10+US $2.84400US $28.44
30+US $2.21200US $66.36
100+US $1.81700US $181.70
500+US $1.73800US $869.00
1000+US $1.58000US $1580.00

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Description

The NVTFS5116PLTWG is a high-performance N-channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) manufactured by ON Semiconductor. This device is designed for various applications, including power management, switching, and amplification in electronic circuits.

Key Features:

  1. Type: N-channel MOSFET
  2. Package: The NVTFS5116PLTWG is housed in a compact, surface-mount package, specifically the DPAK (TO-252) package, which allows for efficient thermal management and space-saving on printed circuit boards (PCBs).
  3. Voltage Rating: The MOSFET has a maximum drain-source voltage (V_DS) rating of 60V, making it suitable for medium-voltage applications.
  4. Current Rating: It can handle a continuous drain current (I_D) of up to 30A, which is beneficial for high-current applications.
  5. R_DS(on): The on-resistance (R_DS(on)) is low, typically around 10 mΩ at a gate-source voltage (V_GS) of 10V, which minimizes power loss during operation and enhances efficiency.
  6. Gate Threshold Voltage: The gate threshold voltage (V_GS(th)) is in the range of 1V to 3V, allowing for easy drive with low-voltage control signals.
  7. Thermal Resistance: The device features a low thermal resistance, which aids in heat dissipation, ensuring reliable operation under high load conditions.
  8. Switching Speed: The NVTFS5116PLTWG exhibits fast switching characteristics, making it suitable for high-frequency applications.

Applications:

  • Power Supply Circuits: Ideal for use in DC-DC converters and power management systems.
  • Motor Control: Suitable for driving motors in various applications, including automotive and industrial systems.
  • Load Switching: Can be used for switching loads in consumer electronics and other devices.
  • LED Drivers: Effective in controlling LED lighting systems due to its efficient switching capabilities.

Electrical Characteristics:

  • Maximum Gate-Source Voltage (V_GS): ±20V
  • Maximum Pulsed Drain Current (I_DM): 60A
  • Body Diode Characteristics: The device includes an intrinsic body diode, which can conduct in the reverse direction, providing additional functionality in certain applications.

Reliability and Compliance:

The NVTFS5116PLTWG is designed to meet stringent reliability standards and is compliant with RoHS (Restriction of Hazardous Substances) regulations, making it suitable for environmentally conscious designs.

Conclusion:

The NVTFS5116PLTWG from ON Semiconductor is a versatile and efficient N-channel MOSFET that offers excellent performance for a wide range of applications. Its combination of high current handling, low on-resistance, and fast switching capabilities makes it a preferred choice for engineers looking to optimize power efficiency in their designs.

Alternatives

Functional Equivalent (FE) materials, including Fused Filament Fabrication (FFF) form, assembly, and functionally compatible substitute materials.

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