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PBSS4230PANP,115

  • Available: 13

Reference Price(In US Dollars)

QtyUnit PriceExt.Price
1+US $0.58494US $0.58
10+US $0.38996US $3.90
30+US $0.29247US $8.77
100+US $0.23398US $23.40
500+US $0.21448US $107.24
1000+US $0.19498US $194.98

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Product Parameter

  • Manufacturer
    Nexperia
  • Manufacturer's Part No.
    PBSS4230PANP,115
  • Categories
    Discrete Semiconductor Products
  • Sub-Categories
    Transistors - Bipolar (BJT) - Arrays
  • Series
    -
  • ECCN
    EAR99
  • Polarity
    NPN, PNP
  • Packaging
    Cut Tape (CT)
  • Pin Count
    6
  • Published
    2012
  • Part Status
    Active
  • Power - Max
    510mW
  • REACH Status
    REACH Unaffected
  • Mounting Type
    Surface Mount
  • Surface Mount
    YES
  • Number of Pins
    6
  • Package / Case
    6-UDFN Exposed Pad
  • Case Connection
    COLLECTOR
  • Terminal Finish
    Tin (Sn)
  • Transistor Type
    NPN, PNP
  • Factory Lead Time
    8 Weeks
  • Number of Elements
    2
  • Radiation Hardening
    No
  • Transition Frequency
    120MHz
  • Element Configuration
    Dual
  • Max Collector Current
    3A
  • Max Power Dissipation
    1.45W
  • Operating Temperature
    150°C TJ
  • Frequency - Transition
    120MHz
  • Gain Bandwidth Product
    95MHz
  • Number of Terminations
    6
  • Transistor Application
    SWITCHING
  • Emitter Base Voltage (VEBO)
    7V
  • Transistor Element Material
    SILICON
  • Collector Base Voltage (VCBO)
    30V
  • Vce Saturation (Max) @ Ib, Ic
    290mV @ 200mA, 2A
  • Current - Collector (Ic) (Max)
    2A
  • Collector Emitter Voltage (VCEO)
    30V
  • Current - Collector Cutoff (Max)
    100nA ICBO
  • Collector Emitter Saturation Voltage
    -75mV
  • DC Current Gain (hFE) (Min) @ Ic, Vce
    200 @ 1A 2V

Environmental & Export Classifications

  • HTSUS
    8541.21.0075
  • RoHS Status
    ROHS3 Compliant
  • JESD-609 Code
    e3
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)

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