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PMBT2222A,215

  • In Stock: 102614
  • Available: 3993228

Reference Price(In US Dollars)

QtyUnit PriceExt.Price
1+US $0.01782US $0.02
10+US $0.01188US $0.12
30+US $0.00891US $0.27
100+US $0.00713US $0.71
500+US $0.00653US $3.27
1000+US $0.00594US $5.94

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Description

The PMBT2222A,215 is a general-purpose NPN bipolar junction transistor (BJT) manufactured by Nexperia, a well-known semiconductor company. This transistor is widely used in various electronic applications due to its versatility and reliability.

Key Features:

  1. Type: NPN Bipolar Junction Transistor
  2. Package: The PMBT2222A is typically available in a SOT-23 package, which is a small, surface-mount package that allows for efficient use of space on printed circuit boards (PCBs).
  3. Maximum Ratings:
    • Collector-Emitter Voltage (Vce): Up to 40V, making it suitable for a variety of applications where moderate voltage handling is required.
    • Collector Current (Ic): Rated for a maximum of 800mA, allowing it to drive loads effectively.
    • Power Dissipation (Pd): Typically around 500mW, depending on the thermal management and ambient conditions.
  4. Current Gain (hFE): The transistor exhibits a current gain (beta) in the range of 100 to 300, which is beneficial for amplification applications.
  5. Switching Speed: The PMBT2222A is capable of fast switching, making it suitable for high-speed applications such as signal processing and digital circuits.
  6. Temperature Range: It operates effectively over a wide temperature range, typically from -55°C to +150°C, ensuring reliability in various environmental conditions.

Applications:

The PMBT2222A,215 is commonly used in:

  • Amplification: It can amplify weak signals in audio and radio frequency applications.
  • Switching: Ideal for switching applications in power management circuits, relays, and motor drivers.
  • Signal Processing: Used in various signal processing circuits due to its fast response time.
  • General Purpose: Suitable for a wide range of general-purpose electronic applications, including consumer electronics, automotive, and industrial devices.

Electrical Characteristics:

  • Base-Emitter Voltage (Vbe): Typically around 0.7V when in the active region.
  • Collector-Base Cut-off Current (Icb): Very low, ensuring minimal leakage when the transistor is off.
  • Transition Frequency (fT): The transistor has a transition frequency that allows it to operate effectively in high-frequency applications.

Conclusion:

The PMBT2222A,215 from Nexperia is a robust and versatile NPN transistor that is well-suited for a variety of electronic applications. Its combination of high current handling, fast switching capabilities, and compact packaging makes it a popular choice among engineers and designers in the electronics industry. Whether used in amplification, switching, or general-purpose applications, the PMBT2222A is a reliable component that can meet the demands of modern electronic designs.

Alternatives

Functional Equivalent (FE) materials, including Fused Filament Fabrication (FFF) form, assembly, and functionally compatible substitute materials.

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