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PMBT3904,215

  • In Stock: 53920
  • Available: 3549200
  • Updated: 14 HRS ago

Reference Price(In US Dollars)

QtyUnit PriceExt.Price
1+US $0.01040US $0.01
10+US $0.00694US $0.07
30+US $0.00520US $0.16
100+US $0.00416US $0.42
500+US $0.00381US $1.91
1000+US $0.00347US $3.47

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Description

The PMBT3904,215 is a NPN bipolar junction transistor (BJT) manufactured by Nexperia, designed for general-purpose switching and amplification applications. Here’s a detailed description of its key features and specifications:

General Characteristics:

  • Type: NPN Bipolar Junction Transistor
  • Package: Typically available in a SOT23 package, which is a small, surface-mount package that allows for efficient use of space on printed circuit boards (PCBs).
  • Pin Configuration: The standard pin configuration for the SOT23 package includes three pins:
    • Pin 1 (Emitter): The terminal through which current exits the transistor.
    • Pin 2 (Base): The terminal that controls the transistor's operation; a small current at this pin allows a larger current to flow from collector to emitter.
    • Pin 3 (Collector): The terminal through which current enters the transistor.

Electrical Specifications:

  • Collector-Emitter Voltage (Vce): Maximum of 60V, indicating the maximum voltage that can be applied across the collector and emitter terminals without breaking down the transistor.
  • Emitter-Base Voltage (Veb): Maximum of 5V, which is the maximum voltage that can be applied between the emitter and base terminals.
  • Collector Current (Ic): Maximum of 200mA, which is the maximum current that can flow through the collector terminal.
  • DC Current Gain (hFE): Typically ranges from 100 to 300, depending on the specific operating conditions, indicating the amplification capability of the transistor.

Performance Characteristics:

  • Transition Frequency (fT): Typically around 100 MHz, which indicates the frequency at which the current gain drops to 1, relevant for high-frequency applications.
  • Power Dissipation (Pd): Maximum of 500mW, which is the maximum power the transistor can dissipate without overheating.
  • Thermal Resistance: The thermal resistance from junction to ambient is typically around 250°C/W, which is important for thermal management in circuit design.

Applications:

The PMBT3904,215 is widely used in various applications, including:

  • Switching Circuits: Ideal for low to medium power switching applications.
  • Amplification: Suitable for audio and RF amplification circuits.
  • Signal Processing: Commonly used in signal processing applications due to its fast switching capabilities.

Additional Features:

  • RoHS Compliant: The PMBT3904,215 is compliant with the Restriction of Hazardous Substances (RoHS) directive, making it suitable for environmentally friendly applications.
  • High Reliability: Nexperia is known for producing high-quality semiconductors, ensuring reliability and performance in various electronic applications.

Conclusion:

The PMBT3904,215 from Nexperia is a versatile and reliable NPN transistor suitable for a wide range of electronic applications, from simple switching tasks to more complex amplification needs. Its compact size, robust electrical characteristics, and compliance with environmental standards make it a popular choice among engineers and designers in the electronics industry.

Alternatives

Functional Equivalent (FE) materials, including Fused Filament Fabrication (FFF) form, assembly, and functionally compatible substitute materials.

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