PMBT3904,215
- Manufacturer's Part No.:PMBT3904,215
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- Series:Automotive, AEC-Q101
- Description:TRANS NPN 40V 0.2A SOT23
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- In Stock: 53920
- Available: 3549200
- Updated: 14 HRS ago
Reference Price(In US Dollars)
Qty | Unit Price | Ext.Price |
---|---|---|
1+ | US $0.01040 | US $0.01 |
10+ | US $0.00694 | US $0.07 |
30+ | US $0.00520 | US $0.16 |
100+ | US $0.00416 | US $0.42 |
500+ | US $0.00381 | US $1.91 |
1000+ | US $0.00347 | US $3.47 |
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The PMBT3904,215 is a NPN bipolar junction transistor (BJT) manufactured by Nexperia, designed for general-purpose switching and amplification applications. Here’s a detailed description of its key features and specifications:
General Characteristics:
- Type: NPN Bipolar Junction Transistor
- Package: Typically available in a SOT23 package, which is a small, surface-mount package that allows for efficient use of space on printed circuit boards (PCBs).
- Pin Configuration: The standard pin configuration for the SOT23 package includes three pins:
- Pin 1 (Emitter): The terminal through which current exits the transistor.
- Pin 2 (Base): The terminal that controls the transistor's operation; a small current at this pin allows a larger current to flow from collector to emitter.
- Pin 3 (Collector): The terminal through which current enters the transistor.
Electrical Specifications:
- Collector-Emitter Voltage (Vce): Maximum of 60V, indicating the maximum voltage that can be applied across the collector and emitter terminals without breaking down the transistor.
- Emitter-Base Voltage (Veb): Maximum of 5V, which is the maximum voltage that can be applied between the emitter and base terminals.
- Collector Current (Ic): Maximum of 200mA, which is the maximum current that can flow through the collector terminal.
- DC Current Gain (hFE): Typically ranges from 100 to 300, depending on the specific operating conditions, indicating the amplification capability of the transistor.
Performance Characteristics:
- Transition Frequency (fT): Typically around 100 MHz, which indicates the frequency at which the current gain drops to 1, relevant for high-frequency applications.
- Power Dissipation (Pd): Maximum of 500mW, which is the maximum power the transistor can dissipate without overheating.
- Thermal Resistance: The thermal resistance from junction to ambient is typically around 250°C/W, which is important for thermal management in circuit design.
Applications:
The PMBT3904,215 is widely used in various applications, including:
- Switching Circuits: Ideal for low to medium power switching applications.
- Amplification: Suitable for audio and RF amplification circuits.
- Signal Processing: Commonly used in signal processing applications due to its fast switching capabilities.
Additional Features:
- RoHS Compliant: The PMBT3904,215 is compliant with the Restriction of Hazardous Substances (RoHS) directive, making it suitable for environmentally friendly applications.
- High Reliability: Nexperia is known for producing high-quality semiconductors, ensuring reliability and performance in various electronic applications.
Conclusion:
The PMBT3904,215 from Nexperia is a versatile and reliable NPN transistor suitable for a wide range of electronic applications, from simple switching tasks to more complex amplification needs. Its compact size, robust electrical characteristics, and compliance with environmental standards make it a popular choice among engineers and designers in the electronics industry.
Functional Equivalent (FE) materials, including Fused Filament Fabrication (FFF) form, assembly, and functionally compatible substitute materials.
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