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PMBT3904VS,115

  • In Stock: 3000
  • Available: 17187

Reference Price(In US Dollars)

QtyUnit PriceExt.Price
1+US $0.25272US $0.25
10+US $0.16848US $1.68
30+US $0.12636US $3.79
100+US $0.10109US $10.11
500+US $0.09266US $46.33
1000+US $0.08424US $84.24

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Quick RFQ
  • Description
  • Alternatives
  • Shopping Guide
Description

The PMBT3904VS,115 is a NPN bipolar junction transistor (BJT) designed for general-purpose switching and amplification applications. It is part of the PMBT3904 series, which is widely used in various electronic circuits due to its reliability and performance characteristics.

Key Features:

  1. Type: NPN Transistor
  2. Package: The PMBT3904VS,115 is typically housed in a SOT-23 package, which is a small, surface-mount device (SMD) that allows for efficient use of space on printed circuit boards (PCBs).
  3. Maximum Collector Current (Ic): The transistor can handle a maximum collector current of approximately 200 mA, making it suitable for low to moderate power applications.
  4. Collector-Emitter Voltage (Vce): The maximum collector-emitter voltage is around 40 V, allowing it to operate in a variety of voltage environments.
  5. Gain (hFE): The transistor exhibits a current gain (hFE) in the range of 100 to 300, depending on the collector current, which is beneficial for amplification purposes.
  6. Transition Frequency (fT): The transition frequency is typically around 250 MHz, indicating its capability for high-frequency applications.
  7. Thermal Characteristics: The PMBT3904VS,115 has a maximum junction temperature of 150°C, which provides a good thermal margin for operation in various environments.

Applications:

  • Switching Circuits: The PMBT3904VS,115 is commonly used in switching applications where it can control larger currents with a smaller input signal.
  • Amplification: It is suitable for audio and RF amplification due to its high gain and frequency response.
  • Signal Processing: The transistor can be used in signal processing circuits, including oscillators and amplifiers.

Electrical Characteristics:

  • Base-Emitter Voltage (Vbe): Typically around 0.7 V when in the active region.
  • Power Dissipation (Pd): The maximum power dissipation is around 300 mW, which is important for thermal management in circuit design.

Pin Configuration:

In the SOT-23 package, the pin configuration is as follows:

  • Pin 1: Base (B)
  • Pin 2: Collector (C)
  • Pin 3: Emitter (E)

Conclusion:

The PMBT3904VS,115 from Nexperia is a versatile and efficient NPN transistor suitable for a wide range of electronic applications. Its compact size, combined with its robust electrical characteristics, makes it a popular choice among engineers and designers for both prototyping and production.

Alternatives

Functional Equivalent (FE) materials, including Fused Filament Fabrication (FFF) form, assembly, and functionally compatible substitute materials.

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