PMBT3904VS,115
- Manufacturer's Part No.:PMBT3904VS,115
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- Series:Automotive, AEC-Q101
- Description:TRANS 2NPN 40V 0.2A SOT666
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- In Stock: 3000
- Available: 17187
Reference Price(In US Dollars)
Qty | Unit Price | Ext.Price |
---|---|---|
1+ | US $0.25272 | US $0.25 |
10+ | US $0.16848 | US $1.68 |
30+ | US $0.12636 | US $3.79 |
100+ | US $0.10109 | US $10.11 |
500+ | US $0.09266 | US $46.33 |
1000+ | US $0.08424 | US $84.24 |
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- Description
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The PMBT3904VS,115 is a NPN bipolar junction transistor (BJT) designed for general-purpose switching and amplification applications. It is part of the PMBT3904 series, which is widely used in various electronic circuits due to its reliability and performance characteristics.
Key Features:
- Type: NPN Transistor
- Package: The PMBT3904VS,115 is typically housed in a SOT-23 package, which is a small, surface-mount device (SMD) that allows for efficient use of space on printed circuit boards (PCBs).
- Maximum Collector Current (Ic): The transistor can handle a maximum collector current of approximately 200 mA, making it suitable for low to moderate power applications.
- Collector-Emitter Voltage (Vce): The maximum collector-emitter voltage is around 40 V, allowing it to operate in a variety of voltage environments.
- Gain (hFE): The transistor exhibits a current gain (hFE) in the range of 100 to 300, depending on the collector current, which is beneficial for amplification purposes.
- Transition Frequency (fT): The transition frequency is typically around 250 MHz, indicating its capability for high-frequency applications.
- Thermal Characteristics: The PMBT3904VS,115 has a maximum junction temperature of 150°C, which provides a good thermal margin for operation in various environments.
Applications:
- Switching Circuits: The PMBT3904VS,115 is commonly used in switching applications where it can control larger currents with a smaller input signal.
- Amplification: It is suitable for audio and RF amplification due to its high gain and frequency response.
- Signal Processing: The transistor can be used in signal processing circuits, including oscillators and amplifiers.
Electrical Characteristics:
- Base-Emitter Voltage (Vbe): Typically around 0.7 V when in the active region.
- Power Dissipation (Pd): The maximum power dissipation is around 300 mW, which is important for thermal management in circuit design.
Pin Configuration:
In the SOT-23 package, the pin configuration is as follows:
- Pin 1: Base (B)
- Pin 2: Collector (C)
- Pin 3: Emitter (E)
Conclusion:
The PMBT3904VS,115 from Nexperia is a versatile and efficient NPN transistor suitable for a wide range of electronic applications. Its compact size, combined with its robust electrical characteristics, makes it a popular choice among engineers and designers for both prototyping and production.
Functional Equivalent (FE) materials, including Fused Filament Fabrication (FFF) form, assembly, and functionally compatible substitute materials.
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