PMBT3946YPN,125
- Manufacturer's Part No.:PMBT3946YPN,125
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- Description:TRANS NPN/PNP 40V 0.2A 6TSSOP
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- Available: 13
Reference Price(In US Dollars)
Qty | Unit Price | Ext.Price |
---|---|---|
1+ | US $0.12474 | US $0.12 |
10+ | US $0.08316 | US $0.83 |
30+ | US $0.06237 | US $1.87 |
100+ | US $0.04990 | US $4.99 |
500+ | US $0.04574 | US $22.87 |
1000+ | US $0.04158 | US $41.58 |
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- Description
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The PMBT3946YPN,125 is a high-performance NPN bipolar junction transistor (BJT) manufactured by Nexperia, a well-known semiconductor company. This transistor is designed for various applications, including switching and amplification in electronic circuits.
Key Features:
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Type: NPN Transistor
- The PMBT3946 is an NPN type, meaning it has three layers of semiconductor material with two n-type layers and one p-type layer. This configuration allows it to conduct current when a positive voltage is applied to the base relative to the emitter.
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Package: SOT23
- The transistor comes in a compact SOT23 package, which is a surface-mount device (SMD) that is widely used in modern electronics due to its small footprint and ease of integration into circuit boards.
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Voltage Ratings:
- Collector-Emitter Voltage (Vce): Typically rated at 40V, allowing it to handle a wide range of voltage applications.
- Collector-Base Voltage (Vcb): Also rated at 40V, providing additional flexibility in circuit design.
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Current Ratings:
- Collector Current (Ic): The maximum continuous collector current is around 600mA, making it suitable for driving loads in various applications.
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Gain Characteristics:
- The transistor features a high current gain (hFE), typically ranging from 100 to 300, which allows for effective amplification of input signals.
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Frequency Response:
- The PMBT3946 is capable of operating at high frequencies, making it suitable for RF applications and fast-switching circuits.
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Thermal Characteristics:
- The device has a maximum junction temperature rating of 150°C, which provides robustness in high-temperature environments.
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Applications:
- Commonly used in low-power switching applications, signal amplification, and as a driver for small loads in consumer electronics, automotive, and industrial applications.
Electrical Characteristics:
- Base-Emitter Voltage (Vbe): Typically around 0.7V when in the active region.
- Power Dissipation (Pd): The maximum power dissipation is around 300mW, which is important for thermal management in circuit design.
Conclusion:
The PMBT3946YPN,125 from Nexperia is a versatile and reliable NPN transistor suitable for a wide range of electronic applications. Its compact size, high voltage and current ratings, and excellent gain characteristics make it an ideal choice for engineers looking to design efficient and effective circuits. Whether used in consumer electronics or industrial applications, this transistor provides the performance and reliability needed for modern electronic designs.
Functional Equivalent (FE) materials, including Fused Filament Fabrication (FFF) form, assembly, and functionally compatible substitute materials.
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