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PMBT4403

  • In Stock: 9000
  • Available: 5447

Reference Price(In US Dollars)

QtyUnit PriceExt.Price
1+US $0.01499US $0.01
10+US $0.01000US $0.10
30+US $0.00750US $0.22
100+US $0.00600US $0.60
500+US $0.00550US $2.75
1000+US $0.00500US $5.00

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Quick RFQ
  • Description
  • Alternatives
  • Shopping Guide
Description

The PMBT4403 is a N-channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) designed for low-voltage applications. It is part of Nexperia's extensive portfolio of discrete semiconductors, which are known for their reliability and performance.

Key Features:

  1. Type: N-channel MOSFET
  2. Package: Typically available in a SOT23 package, which is a small, surface-mount package that allows for efficient use of PCB space.
  3. Voltage Rating: The PMBT4403 has a maximum drain-source voltage (V_DS) of around 30V, making it suitable for low to moderate voltage applications.
  4. Current Rating: It can handle a continuous drain current (I_D) of approximately 1.5A, which is adequate for many switching and amplification tasks.
  5. R_DS(on): The on-resistance (R_DS(on)) is low, typically around 0.1 to 0.2 ohms at a gate-source voltage (V_GS) of 10V, which helps in minimizing power loss during operation.
  6. Gate Threshold Voltage (V_GS(th)): The threshold voltage is typically in the range of 1V to 3V, allowing it to be driven by low-voltage logic levels.
  7. Switching Speed: The PMBT4403 features fast switching capabilities, making it suitable for high-frequency applications.

Applications:

The PMBT4403 is commonly used in various applications, including:

  • Switching Regulators: It can be used in power management circuits to switch power efficiently.
  • Load Switching: Ideal for controlling loads in consumer electronics, automotive applications, and industrial equipment.
  • Signal Switching: Useful in analog signal switching applications due to its low on-resistance and fast switching speed.

Electrical Characteristics:

  • Maximum Gate-Source Voltage (V_GS): Typically rated at ±20V, ensuring safe operation within specified limits.
  • Thermal Resistance: The thermal resistance junction-to-ambient (RθJA) is low, allowing for effective heat dissipation during operation.

Reliability:

Nexperia is known for its commitment to quality and reliability, and the PMBT4403 is no exception. It is manufactured using advanced semiconductor technology, ensuring consistent performance and longevity in various operating conditions.

Conclusion:

The PMBT4403 from Nexperia is a versatile N-channel MOSFET that offers a combination of low on-resistance, moderate voltage and current ratings, and fast switching capabilities. Its compact SOT23 package makes it an excellent choice for space-constrained applications, while its robust performance ensures it can handle a variety of electronic tasks efficiently.

Alternatives

Functional Equivalent (FE) materials, including Fused Filament Fabrication (FFF) form, assembly, and functionally compatible substitute materials.

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