PSMN025-100D,118

The PSMN025-100D,118 is a high-performance N-channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) manufactured by Nexperia, a well-known semiconductor company. This particular MOSFET is designed for applications requiring efficient power management and switching capabilities.

Key Features:

1. Type: N-channel MOSFET
2. Voltage Rating: The PSMN025-100D can handle a maximum drain-source voltage (V_DS) of 100V, making it suitable for high-voltage applications.
3. Current Rating: It has a continuous drain current (I_D) rating of up to 25A, allowing it to manage significant power loads effectively.
4. R_DS(on): The on-resistance (R_DS(on)) is exceptionally low, typically around 0.025 ohms at a gate-source voltage (V_GS) of 10V. This low resistance minimizes power loss during operation, enhancing efficiency.
5. Gate Threshold Voltage (V_GS(th)): The gate threshold voltage is typically between 1V to 2.5V, which allows for easy drive with standard logic levels.
6. Package Type: The device is housed in a DPAK (TO-252) package, which is a surface-mount package that provides good thermal performance and is suitable for automated assembly processes.
7. Thermal Resistance: The thermal resistance from junction to case (RθJC) is low, facilitating effective heat dissipation during operation.
8. Switching Speed: The PSMN025-100D is designed for fast switching applications, making it ideal for use in power supplies, motor drivers, and other high-frequency applications.

Applications:

• Power Management: Used in DC-DC converters, power supplies, and battery management systems.
• Motor Control: Suitable for driving motors in various applications, including automotive and industrial systems.
• Switching Regulators: Ideal for use in synchronous rectification and other switching applications where efficiency is critical.

Electrical Characteristics:

• Maximum Gate-Source Voltage (V_GS): ±20V
• Maximum Power Dissipation (P_D): Typically around 50W, depending on the thermal management.
• Body Diode Characteristics: The device features an intrinsic body diode, which can conduct current in the reverse direction, useful in certain applications.

Conclusion:

The PSMN025-100D,118 from Nexperia is a robust and efficient N-channel MOSFET that excels in high-voltage and high-current applications. Its low on-resistance, fast switching capabilities, and thermal performance make it a preferred choice for engineers looking to optimize power management solutions in various electronic designs.