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PSMN0R9-25YLC,115

  • In Stock: 93000
  • Available: 122949

Reference Price(In US Dollars)

QtyUnit PriceExt.Price
1+US $1.30350US $1.30
10+US $0.86900US $8.69
30+US $0.65175US $19.55
100+US $0.52140US $52.14
500+US $0.47795US $238.98
1000+US $0.43450US $434.50

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  • Description
  • Alternatives
  • Shopping Guide
Description

The PSMN0R9-25YLC,115 is a high-performance N-channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) manufactured by Nexperia, a well-known semiconductor company. This component is designed for various applications, including power management, motor control, and DC-DC converters, due to its efficient switching capabilities and low on-resistance.

Key Features:

  1. N-Channel Configuration: The PSMN0R9-25YLC,115 is an N-channel MOSFET, which means it uses electrons as the charge carriers, providing better conductivity and efficiency compared to P-channel devices.

  2. Low On-Resistance (RDS(on)): One of the standout features of this MOSFET is its low on-resistance, typically around 0.9 mΩ at a gate-source voltage (VGS) of 10V. This low resistance minimizes power loss during operation, making it ideal for high-efficiency applications.

  3. High Voltage Rating: The device can handle a maximum drain-source voltage (VDS) of 25V, making it suitable for low to medium voltage applications.

  4. High Current Capability: The PSMN0R9-25YLC,115 can support continuous drain currents of up to 80A, allowing it to manage significant power loads effectively.

  5. Fast Switching Speed: This MOSFET is designed for fast switching applications, which is crucial in reducing switching losses in power conversion circuits.

  6. Thermal Performance: The package design and materials used in the PSMN0R9-25YLC,115 contribute to its excellent thermal performance, allowing it to operate efficiently even under high load conditions.

Package Type:

The PSMN0R9-25YLC,115 is typically available in a TO-220 package, which provides good thermal dissipation and is easy to mount on heatsinks. The package features three terminals: gate (G), drain (D), and source (S), allowing for straightforward integration into electronic circuits.

Applications:

  • Power Supply Circuits: Ideal for use in switch-mode power supplies (SMPS) and other power management systems.
  • Motor Drivers: Suitable for driving DC motors and other inductive loads due to its high current handling capability.
  • Battery Management Systems: Can be used in battery protection circuits and charging applications.

Conclusion:

The PSMN0R9-25YLC,115 from Nexperia is a robust and efficient N-channel MOSFET that excels in various power applications. Its low on-resistance, high current capacity, and fast switching characteristics make it a preferred choice for engineers looking to optimize performance in their designs.

Alternatives

Functional Equivalent (FE) materials, including Fused Filament Fabrication (FFF) form, assembly, and functionally compatible substitute materials.

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