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QH8JA1TCR

  • Available: 287934

Reference Price(In US Dollars)

QtyUnit PriceExt.Price
1+US $0.82398US $0.82
10+US $0.54932US $5.49
30+US $0.41199US $12.36
100+US $0.32959US $32.96
500+US $0.30213US $151.07
1000+US $0.27466US $274.66

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Product Parameter

  • Manufacturer
    Rohm Semiconductor
  • Manufacturer's Part No.
    QH8JA1TCR
  • Categories
    Discrete Semiconductor Products
  • Sub-Categories
    Transistors - FETs, MOSFETs - Arrays
  • Series
    -
  • ECCN
    EAR99
  • FET Type
    2 P-Channel (Dual)
  • Packaging
    Cut Tape (CT)
  • Part Status
    Active
  • Power - Max
    1.5W
  • REACH Status
    REACH Unaffected
  • Configuration
    SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
  • Mounting Type
    Surface Mount
  • Surface Mount
    YES
  • FET Technology
    METAL-OXIDE SEMICONDUCTOR
  • Operating Mode
    ENHANCEMENT MODE
  • Package / Case
    8-SMD, Flat Lead
  • Factory Lead Time
    20 Weeks
  • Number of Elements
    2
  • Vgs(th) (Max) @ Id
    1.2V @ 1mA
  • Operating Temperature
    -55°C~150°C TJ
  • Reach Compliance Code
    not_compliant
  • Number of Terminations
    8
  • Rds On (Max) @ Id, Vgs
    38m Ω @ 5A, 4.5V
  • Transistor Application
    SWITCHING
  • DS Breakdown Voltage-Min
    20V
  • Reflow Temperature-Max (s)
    NOT SPECIFIED
  • Transistor Element Material
    SILICON
  • Drain Current-Max (Abs) (ID)
    5A
  • Gate Charge (Qg) (Max) @ Vgs
    10.2nC @ 4.5V
  • Avalanche Energy Rating (Eas)
    8.9 mJ
  • Peak Reflow Temperature (Cel)
    NOT SPECIFIED
  • Drain to Source Voltage (Vdss)
    30V
  • Drain-source On Resistance-Max
    0.048Ohm
  • Pulsed Drain Current-Max (IDM)
    18A
  • Input Capacitance (Ciss) (Max) @ Vds
    720pF @ 10V
  • Current - Continuous Drain (Id) @ 25°C
    5A

Environmental & Export Classifications

  • HTSUS
    8541.29.0095
  • ECCN Code
    EAR99
  • RoHS Status
    ROHS3 Compliant
  • JESD-30 Code
    R-PDSO-F8
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)

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