QH8MA4TCR
- Manufacturer's Part No.:QH8MA4TCR
- Manufacturer:
- Categories:
- Sub-Categories:
- Series:-
- Description:MOSFET N/P-CH 30V TSMT8
- Datasheet:
- Quantity:RFQAdd to RFQ List
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- Available: 285387
Reference Price(In US Dollars)
Qty | Unit Price | Ext.Price |
---|---|---|
1+ | US $0.83115 | US $0.83 |
10+ | US $0.55410 | US $5.54 |
30+ | US $0.41558 | US $12.47 |
100+ | US $0.33246 | US $33.25 |
500+ | US $0.30476 | US $152.38 |
1000+ | US $0.27705 | US $277.05 |
Do you want a lower wholesale price? Please send us an inquiry, and we will respond immediately.
Product Parameter
- ManufacturerRohm Semiconductor
- Manufacturer's Part No.QH8MA4TCR
- CategoriesDiscrete Semiconductor Products
- Sub-CategoriesTransistors - FETs, MOSFETs - Arrays
- Series-
- ECCNEAR99
- MountSurface Mount
- FET TypeN and P-Channel
- PackagingCut Tape (CT)
- Published2015
- FET FeatureStandard
- Part StatusActive
- REACH StatusREACH Unaffected
- Mounting TypeSurface Mount
- FET TechnologyMETAL-OXIDE SEMICONDUCTOR
- Number of Pins2
- Operating ModeENHANCEMENT MODE
- Package / Case8-SMD, Flat Lead
- Factory Lead Time20 Weeks
- Terminal PositionDUAL
- Number of Elements2
- Vgs(th) (Max) @ Id2.5V @ 1mA
- Max Power Dissipation1.5W
- Operating Temperature150°C TJ
- Polarity/Channel TypeN-CHANNEL AND P-CHANNEL
- Number of Terminations8
- Rds On (Max) @ Id, Vgs16m Ω @ 9A, 10V
- Transistor ApplicationSWITCHING
- DS Breakdown Voltage-Min30V
- Reflow Temperature-Max (s)NOT SPECIFIED
- Transistor Element MaterialSILICON
- Gate Charge (Qg) (Max) @ Vgs15.5nC @ 10V
- Avalanche Energy Rating (Eas)3.5 mJ
- Continuous Drain Current (ID)8A
- Peak Reflow Temperature (Cel)NOT SPECIFIED
- Drain to Source Voltage (Vdss)30V
- Drain-source On Resistance-Max0.016Ohm
- Input Capacitance (Ciss) (Max) @ Vds640pF @ 15V
- Current - Continuous Drain (Id) @ 25°C9A 8A
Environmental & Export Classifications
- HTSUS8541.29.0095
- ECCN CodeEAR99
- RoHS StatusROHS3 Compliant
- JESD-30 CodeR-PDSO-F8
- Moisture Sensitivity Level (MSL)1 (Unlimited)
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