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QH8MA4TCR

  • Available: 285387

Reference Price(In US Dollars)

QtyUnit PriceExt.Price
1+US $0.83115US $0.83
10+US $0.55410US $5.54
30+US $0.41558US $12.47
100+US $0.33246US $33.25
500+US $0.30476US $152.38
1000+US $0.27705US $277.05

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Product Parameter

  • Manufacturer
    Rohm Semiconductor
  • Manufacturer's Part No.
    QH8MA4TCR
  • Categories
    Discrete Semiconductor Products
  • Sub-Categories
    Transistors - FETs, MOSFETs - Arrays
  • Series
    -
  • ECCN
    EAR99
  • Mount
    Surface Mount
  • FET Type
    N and P-Channel
  • Packaging
    Cut Tape (CT)
  • Published
    2015
  • FET Feature
    Standard
  • Part Status
    Active
  • REACH Status
    REACH Unaffected
  • Mounting Type
    Surface Mount
  • FET Technology
    METAL-OXIDE SEMICONDUCTOR
  • Number of Pins
    2
  • Operating Mode
    ENHANCEMENT MODE
  • Package / Case
    8-SMD, Flat Lead
  • Factory Lead Time
    20 Weeks
  • Terminal Position
    DUAL
  • Number of Elements
    2
  • Vgs(th) (Max) @ Id
    2.5V @ 1mA
  • Max Power Dissipation
    1.5W
  • Operating Temperature
    150°C TJ
  • Polarity/Channel Type
    N-CHANNEL AND P-CHANNEL
  • Number of Terminations
    8
  • Rds On (Max) @ Id, Vgs
    16m Ω @ 9A, 10V
  • Transistor Application
    SWITCHING
  • DS Breakdown Voltage-Min
    30V
  • Reflow Temperature-Max (s)
    NOT SPECIFIED
  • Transistor Element Material
    SILICON
  • Gate Charge (Qg) (Max) @ Vgs
    15.5nC @ 10V
  • Avalanche Energy Rating (Eas)
    3.5 mJ
  • Continuous Drain Current (ID)
    8A
  • Peak Reflow Temperature (Cel)
    NOT SPECIFIED
  • Drain to Source Voltage (Vdss)
    30V
  • Drain-source On Resistance-Max
    0.016Ohm
  • Input Capacitance (Ciss) (Max) @ Vds
    640pF @ 15V
  • Current - Continuous Drain (Id) @ 25°C
    9A 8A

Environmental & Export Classifications

  • HTSUS
    8541.29.0095
  • ECCN Code
    EAR99
  • RoHS Status
    ROHS3 Compliant
  • JESD-30 Code
    R-PDSO-F8
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)

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