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QPD1010
- Manufacturer's Part No.:QPD1010
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Product Parameter
- ManufacturerQorvo
- Manufacturer's Part No.QPD1010
- CategoriesDiscrete Semiconductor Products
- Sub-CategoriesTransistors - JFETs
- SeriesQPD1010
- Vgs - Gate-Source Breakdown Voltage145 V
- Moisture SensitiveYes
- Development KitQPD1010-EVB1
- RoHSDetails
- BrandQorvo
- PackagingWaffle
- SubcategoryTransistors
- Product TypeRF JFET Transistors
- Product CategoryRF JFET Transistors
- Factory Pack QuantityFactory Pack Quantity50
- TechnologyGaN-on-SiC
- ConfigurationSingle
- Unit Weight0.081130 oz
- Mounting StyleSMD/SMT
- Package / CaseQFN-16
- Part # Aliases1132873 1132873
- Transistor PolarityN-Channel
- Pd - Power Dissipation13.5 W
- Id - Continuous Drain Current400 mA
- Maximum Operating Temperature+ 85 C
- Minimum Operating Temperature- 40 C
- Vds - Drain-Source Breakdown Voltage50 V
- Vgs th - Gate-Source Threshold Voltage- 2.8 V
- Transistor TypeHEMT
- Operating Temperature Range- 40 C to + 85 C
- Output Power11 W
- Operating Frequency4 GHz
- Gain24.7 dB
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