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QPD1025L
- Manufacturer’s Part#:QPD1025L
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Product Parameter
- ManufacturerQorvo
- Manufacturer's Part #QPD1025L
- CategoriesDiscrete Semiconductor Products
- Sub-CategoriesTransistors - JFETs
- SeriesQPD1025L
- Maximum Drain Gate Voltage225 V
- Moisture SensitiveYes
- Development KitQPD1025LEVB1
- RoHSDetails
- BrandQorvo
- PackagingTray
- SubcategoryTransistors
- Product TypeRF JFET Transistors
- Product CategoryRF JFET Transistors
- Factory Pack QuantityFactory Pack Quantity18
- TechnologyGaN-on-SiC
- ConfigurationDual Gate Dual Drain
- Unit Weight1.399148 oz
- ApplicationAvionics, IFF Transponders
- Mounting StyleSMD/SMT
- Package / CaseNI-1230-4
- Pd - Power Dissipation758 W
- Id - Continuous Drain Current28 A
- Maximum Operating Temperature+ 85 C
- Minimum Operating Temperature- 40 C
- Transistor TypeHEMT
- Output Power1.5 kW
- Operating Frequency1 GHz to 1.1 GHz
- Gain22.9 dB
Environmental & Export Classifications
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