QS6M4TR
- Manufacturer's Part No.:QS6M4TR
- Manufacturer:
- Categories:
- Sub-Categories:
- Series:-
- Description:MOSFET N/P-CH 30V/20V 1.5A TSMT6
- Datasheet:
- Quantity:RFQAdd to RFQ List
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- In Stock: 30000
- Available: 457093
Reference Price(In US Dollars)
Qty | Unit Price | Ext.Price |
---|---|---|
1+ | US $0.48000 | US $0.48 |
10+ | US $0.32000 | US $3.20 |
30+ | US $0.24000 | US $7.20 |
100+ | US $0.19200 | US $19.20 |
500+ | US $0.17600 | US $88.00 |
1000+ | US $0.16000 | US $160.00 |
Do you want a lower wholesale price? Please send us an inquiry, and we will respond immediately.
Product Parameter
- ManufacturerRohm Semiconductor
- Manufacturer's Part No.QS6M4TR
- CategoriesDiscrete Semiconductor Products
- Sub-CategoriesTransistors - FETs, MOSFETs - Arrays
- Series-
- ECCNEAR99
- MountSurface Mount
- FET TypeN and P-Channel
- HTS Code8541.29.00.95
- Lead FreeLead Free
- PackagingTape & Reel (TR)
- Pin Count6
- Published2006
- Rise Time12ns
- FET FeatureLogic Level Gate
- Part StatusActive
- Pbfree Codeyes
- SubcategoryOther Transistors
- REACH StatusREACH Unaffected
- Mounting TypeSurface Mount
- Terminal FormGULL WING
- Current Rating1.5A
- FET TechnologyMETAL-OXIDE SEMICONDUCTOR
- Number of Pins6
- Operating ModeENHANCEMENT MODE
- Package / CaseSOT-23-6 Thin, TSOT-23-6
- Fall Time (Typ)12 ns
- Base Part Number*M4
- Factory Lead Time20 Weeks
- Power Dissipation1.25W
- Threshold Voltage1.5V
- Number of Elements2
- Vgs(th) (Max) @ Id1.5V @ 1mA
- Radiation HardeningNo
- Turn-Off Delay Time45 ns
- Element ConfigurationDual
- Max Power Dissipation1.25W
- Operating Temperature150°C TJ
- Polarity/Channel TypeN-CHANNEL AND P-CHANNEL
- Number of Terminations6
- Rds On (Max) @ Id, Vgs230m Ω @ 1.5A, 4.5V
- Transistor ApplicationSWITCHING
- Reflow Temperature-Max (s)10
- Transistor Element MaterialSILICON
- Gate Charge (Qg) (Max) @ Vgs1.6nC @ 4.5V
- Gate to Source Voltage (Vgs)12V
- Continuous Drain Current (ID)1.5A
- Peak Reflow Temperature (Cel)260
- Drain to Source Voltage (Vdss)30V 20V
- Drain-source On Resistance-Max0.245Ohm
- Drain to Source Breakdown Voltage-20V
- Input Capacitance (Ciss) (Max) @ Vds80pF @ 10V
Environmental & Export Classifications
- HTSUS8541.29.0095
- ECCN CodeEAR99
- RoHS StatusROHS3 Compliant
- JESD-609 Codee1
- Moisture Sensitivity Level (MSL)1 (Unlimited)
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