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QS8K11TCR

  • In Stock: 300000
  • Available: 317720

Reference Price(In US Dollars)

QtyUnit PriceExt.Price
1+US $9.52400US $9.52
10+US $8.57160US $85.72
30+US $6.66680US $200.00
100+US $5.47630US $547.63
500+US $5.23820US $2619.10
1000+US $4.76200US $4762.00

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Product Parameter

  • Manufacturer
    Rohm Semiconductor
  • Manufacturer's Part No.
    QS8K11TCR
  • Categories
    Discrete Semiconductor Products
  • Sub-Categories
    Transistors - FETs, MOSFETs - Arrays
  • Series
    -
  • ECCN
    EAR99
  • FET Type
    2 N-Channel (Dual)
  • Packaging
    Cut Tape (CT)
  • Pin Count
    8
  • Part Status
    Active
  • Pbfree Code
    yes
  • Power - Max
    1.5W
  • Subcategory
    FET General Purpose Power
  • REACH Status
    REACH Unaffected
  • Configuration
    SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
  • Mounting Type
    Surface Mount
  • Surface Mount
    YES
  • FET Technology
    METAL-OXIDE SEMICONDUCTOR
  • Operating Mode
    ENHANCEMENT MODE
  • Package / Case
    8-SMD, Flat Lead
  • Factory Lead Time
    20 Weeks
  • Number of Elements
    2
  • Vgs(th) (Max) @ Id
    2.5V @ 1mA
  • Operating Temperature
    150°C TJ
  • Number of Terminations
    8
  • Rds On (Max) @ Id, Vgs
    50m Ω @ 3.5A, 10V
  • Transistor Application
    SWITCHING
  • DS Breakdown Voltage-Min
    30V
  • Reflow Temperature-Max (s)
    NOT SPECIFIED
  • Power Dissipation-Max (Abs)
    1.5W
  • Transistor Element Material
    SILICON
  • Drain Current-Max (Abs) (ID)
    3.5A
  • Gate Charge (Qg) (Max) @ Vgs
    3.3nC @ 5V
  • Peak Reflow Temperature (Cel)
    NOT SPECIFIED
  • Drain to Source Voltage (Vdss)
    30V
  • Drain-source On Resistance-Max
    0.07Ohm
  • Pulsed Drain Current-Max (IDM)
    12A
  • Input Capacitance (Ciss) (Max) @ Vds
    180pF @ 10V
  • Current - Continuous Drain (Id) @ 25°C
    3.5A

Environmental & Export Classifications

  • HTSUS
    8541.29.0095
  • ECCN Code
    EAR99
  • RoHS Status
    ROHS3 Compliant
  • JESD-30 Code
    R-PDSO-F8
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)

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