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RB751V40T1G
- Manufacturer's Part No.:RB751V40T1G
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- Description:DIODE SCHOTTKY 30V 30MA SOD323
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- Quantity:Buy NowAdd to Cart
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- In Stock: 87000
- Available: 2150906
Reference Price(In US Dollars)
Qty | Unit Price | Ext.Price |
---|---|---|
1+ | US $0.06930 | US $0.07 |
10+ | US $0.04620 | US $0.46 |
30+ | US $0.03465 | US $1.04 |
100+ | US $0.02772 | US $2.77 |
500+ | US $0.02541 | US $12.71 |
1000+ | US $0.02310 | US $23.10 |
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- Description
- Alternatives
- Shopping Guide
The RB751V40T1G is a Schottky barrier rectifier diode manufactured by ON Semiconductor. This component is designed for applications requiring efficient rectification with low forward voltage drop and fast switching capabilities.
Key Features:
- Type: Schottky Barrier Rectifier
- Configuration: Single diode
- Maximum Reverse Voltage (VR): The RB751V40T1G can handle a maximum reverse voltage of 40 volts, making it suitable for various power supply and rectification applications.
- Forward Current (IF): It has a maximum forward current rating of 1 ampere, allowing it to conduct significant current in applications such as power management and DC-DC converters.
- Forward Voltage Drop (VF): The diode exhibits a low forward voltage drop, typically around 0.45 volts at 1 ampere, which contributes to its efficiency and reduces power loss during operation.
- Reverse Recovery Time (trr): The RB751V40T1G features a very fast reverse recovery time, which is a critical parameter for high-frequency applications, ensuring minimal switching losses.
- Package Type: It is available in a surface-mount package (SOD-123), which is compact and suitable for automated assembly processes, making it ideal for space-constrained designs.
- Operating Temperature Range: The diode can operate in a wide temperature range, typically from -55°C to +150°C, allowing it to be used in various environmental conditions.
Applications:
The RB751V40T1G is commonly used in:
- Power supply circuits
- DC-DC converters
- Battery charging applications
- Solar inverters
- General-purpose rectification in electronic circuits
Electrical Characteristics:
- Capacitance (C): The diode has a low junction capacitance, which helps in maintaining high-speed performance in switching applications.
- Thermal Resistance (RθJA): The thermal resistance from junction to ambient is designed to ensure efficient heat dissipation, which is crucial for maintaining reliability and performance under load.
Conclusion:
The RB751V40T1G from ON Semiconductor is a versatile and efficient Schottky diode that is well-suited for a variety of electronic applications. Its low forward voltage drop, fast switching speed, and robust thermal performance make it an excellent choice for modern power management solutions.
Functional Equivalent (FE) materials, including Fused Filament Fabrication (FFF) form, assembly, and functionally compatible substitute materials.
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