RFN1LAM7STR

The RFN1LAM7STR is a high-performance N-channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) manufactured by Rohm Semiconductor. This component is designed for various applications, including power management, switching, and amplification in electronic circuits.

Key Features:

1. N-Channel Configuration: The RFN1LAM7STR is an N-channel MOSFET, which means it uses electrons as the charge carriers. This configuration typically offers lower on-resistance and higher efficiency compared to P-channel devices.

2. Voltage and Current Ratings: The device is rated for a maximum drain-source voltage (V_DS) of around 30V, making it suitable for low to medium voltage applications. It can handle continuous drain current (I_D) of up to 1.5A, which allows it to drive moderate loads effectively.

3. On-Resistance (R_DS(on)): One of the standout features of the RFN1LAM7STR is its low on-resistance, typically in the range of a few milliohms. This characteristic minimizes power loss during operation, enhancing overall efficiency and thermal performance.

4. Gate Threshold Voltage (V_GS(th)): The gate threshold voltage is relatively low, allowing the MOSFET to be driven by standard logic levels. This feature is particularly beneficial in digital circuits where low-voltage control signals are used.

5. Package Type: The RFN1LAM7STR is available in a compact SOT-23 package, which is ideal for space-constrained applications. The small footprint and low profile make it suitable for use in portable devices and compact electronic systems.

6. Thermal Performance: The device is designed to operate efficiently at elevated temperatures, with a maximum junction temperature (T_J) rating of 150°C. This allows for reliable performance in demanding environments.

7. Applications: The RFN1LAM7STR is commonly used in various applications, including:

   • Power supply circuits
   • Motor drivers
   • LED drivers
   • Battery management systems
   • Load switching

Electrical Characteristics:

• V_DS (Max): 30V
• I_D (Max): 1.5A
• R_DS(on): Typically around 10-20 mΩ
• V_GS(th): Typically 1-2V

Conclusion:

The RFN1LAM7STR from Rohm Semiconductor is a versatile and efficient N-channel MOSFET that is well-suited for a wide range of electronic applications. Its low on-resistance, compact package, and robust electrical characteristics make it an excellent choice for designers looking to optimize performance in power management and switching applications.