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RFN1LAM7STR
- Manufacturer's Part No.:RFN1LAM7STR
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- Description:DIODE GEN PURP 700V 800MA PMDTM
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- Quantity:Buy NowAdd to Cart
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- In Stock: 14839
- Available: 52000
Reference Price(In US Dollars)
Qty | Unit Price | Ext.Price |
---|---|---|
1+ | US $0.23850 | US $0.24 |
10+ | US $0.15900 | US $1.59 |
30+ | US $0.11925 | US $3.58 |
100+ | US $0.09540 | US $9.54 |
500+ | US $0.08745 | US $43.73 |
1000+ | US $0.07950 | US $79.50 |
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- Description
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- Shopping Guide
The RFN1LAM7STR is a high-performance N-channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) manufactured by Rohm Semiconductor. This component is designed for various applications, including power management, switching, and amplification in electronic circuits.
Key Features:
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N-Channel Configuration: The RFN1LAM7STR is an N-channel MOSFET, which means it uses electrons as the charge carriers. This configuration typically offers lower on-resistance and higher efficiency compared to P-channel devices.
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Voltage and Current Ratings: The device is rated for a maximum drain-source voltage (V_DS) of around 30V, making it suitable for low to medium voltage applications. It can handle continuous drain current (I_D) of up to 1.5A, which allows it to drive moderate loads effectively.
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On-Resistance (R_DS(on)): One of the standout features of the RFN1LAM7STR is its low on-resistance, typically in the range of a few milliohms. This characteristic minimizes power loss during operation, enhancing overall efficiency and thermal performance.
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Gate Threshold Voltage (V_GS(th)): The gate threshold voltage is relatively low, allowing the MOSFET to be driven by standard logic levels. This feature is particularly beneficial in digital circuits where low-voltage control signals are used.
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Package Type: The RFN1LAM7STR is available in a compact SOT-23 package, which is ideal for space-constrained applications. The small footprint and low profile make it suitable for use in portable devices and compact electronic systems.
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Thermal Performance: The device is designed to operate efficiently at elevated temperatures, with a maximum junction temperature (T_J) rating of 150°C. This allows for reliable performance in demanding environments.
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Applications: The RFN1LAM7STR is commonly used in various applications, including:
- Power supply circuits
- Motor drivers
- LED drivers
- Battery management systems
- Load switching
Electrical Characteristics:
- V_DS (Max): 30V
- I_D (Max): 1.5A
- R_DS(on): Typically around 10-20 mΩ
- V_GS(th): Typically 1-2V
Conclusion:
The RFN1LAM7STR from Rohm Semiconductor is a versatile and efficient N-channel MOSFET that is well-suited for a wide range of electronic applications. Its low on-resistance, compact package, and robust electrical characteristics make it an excellent choice for designers looking to optimize performance in power management and switching applications.
Functional Equivalent (FE) materials, including Fused Filament Fabrication (FFF) form, assembly, and functionally compatible substitute materials.
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