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RM12N650T2

  • Available: 66244

Reference Price(In US Dollars)

QtyUnit PriceExt.Price
1+US $0.67000US $0.67

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Product Parameter

  • Manufacturer
    Rectron USA
  • Manufacturer's Part No.
    RM12N650T2
  • Categories
    Discrete Semiconductor Products
  • Sub-Categories
    Transistors - FETs, MOSFETs - Single
  • Series
    -
  • Mfr
    Rectron USA
  • FET Type
    N-Channel
  • Vgs (Max)
    ±30V
  • Technology
    MOSFET (Metal Oxide)
  • FET Feature
    -
  • Mounting Type
    Through Hole
  • Package / Case
    TO-220-3
  • Vgs(th) (Max) @ Id
    4V @ 250μA
  • Operating Temperature
    -55°C ~ 150°C (TJ)
  • Rds On (Max) @ Id, Vgs
    360mOhm @ 7A, 10V
  • Supplier Device Package
    TO-220-3
  • Drain to Source Voltage (Vdss)
    650 V
  • Input Capacitance (Ciss) (Max) @ Vds
    870 pF @ 50 V
  • Current - Continuous Drain (Id) @ 25°C
    11.5A (Tc)

Environmental & Export Classifications

  • HTSUS
    8541.10.0080
  • RoHS Status
    ROHS3 Compliant
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)

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