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RN1102MFV,L3F

  • Available: 21831

Reference Price(In US Dollars)

QtyUnit PriceExt.Price
1+US $0.10527US $0.11
10+US $0.07018US $0.70
30+US $0.05264US $1.58
100+US $0.04211US $4.21
500+US $0.03860US $19.30
1000+US $0.03509US $35.09

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Description

The RN1102MFV,L3F is a silicon N-channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) manufactured by Toshiba Corporation. It is designed for various electronic applications where efficient power switching and amplification are required. This MOSFET offers high performance, reliability, and versatility in a compact package.

Key Features:

  • N-Channel MOSFET: The RN1102MFV,L3F is an N-channel enhancement mode MOSFET, which allows for low on-state resistance (RDS(on)) and high current handling capability in electronic circuits.
  • Small Form Factor: This MOSFET is available in a small surface-mount package, enabling space-efficient designs in applications where board real estate is limited.
  • High Power Efficiency: With its low on-state resistance and high current-handling capability, the RN1102MFV,L3F offers high power efficiency, minimizing conduction losses and improving overall system efficiency.
  • Low Gate Drive Voltage: The MOSFET features a low gate threshold voltage, enabling easy and efficient gate control with low-power drive signals.
  • Fast Switching Speed: It exhibits fast switching characteristics, allowing for rapid turn-on and turn-off transitions, which is essential in applications requiring high-speed operation.
  • High Temperature Performance: Designed to operate over a wide temperature range, the RN1102MFV,L3F maintains stable performance even in harsh operating environments.
  • RoHS Compliance: The RN1102MFV,L3F complies with the Restriction of Hazardous Substances (RoHS) directive, ensuring it meets environmental standards and regulations.

Applications:

  • Power Management: The MOSFET is suitable for various power management applications such as voltage regulation, power switching, and DC-DC conversion in power supplies, voltage regulators, and battery management systems.
  • Motor Control: It can be used in motor control circuits for controlling the speed and direction of motors in applications such as robotics, automotive systems, and industrial automation.
  • LED Lighting: In LED driver circuits and lighting control applications, the RN1102MFV,L3F MOSFET can be employed for efficient power switching and dimming control in LED lighting fixtures and displays.
  • Switching Circuits: It finds use in various switching circuits including audio amplifiers, DC motor drivers, relay drivers, and inductive load drivers for efficient power switching and amplification.
  • Voltage Regulation: The MOSFET can be utilized in voltage regulation circuits, voltage converters, and voltage stabilizers for maintaining stable output voltage levels in electronic systems and power supplies.
  • Battery Management: In battery charging and protection circuits, the RN1102MFV,L3F can be integrated for efficient power switching and battery management functions in portable electronics, electric vehicles, and renewable energy systems.
Alternatives

Functional Equivalent (FE) materials, including Fused Filament Fabrication (FFF) form, assembly, and functionally compatible substitute materials.

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