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RN2906,LF

  • Available: 3000

Reference Price(In US Dollars)

QtyUnit PriceExt.Price
1+US $0.08820US $0.09
10+US $0.05880US $0.59
30+US $0.04410US $1.32
100+US $0.03528US $3.53
500+US $0.03234US $16.17
1000+US $0.02940US $29.40

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Product Parameter

  • Manufacturer
    Toshiba
  • Manufacturer's Part No.
    RN2906,LF
  • Categories
    Discrete Semiconductor Products
  • Sub-Categories
    Transistors - Bipolar (BJT) - Arrays, Pre-Biased
  • Series
    -
  • ECCN
    EAR99
  • Mount
    Surface Mount
  • Width
    1.25mm
  • Height
    900μm
  • Length
    2mm
  • hFE Min
    80
  • Polarity
    PNP
  • Packaging
    Cut Tape (CT)
  • Published
    2014
  • Part Status
    Active
  • Power - Max
    200mW
  • REACH Status
    REACH Unaffected
  • Mounting Type
    Surface Mount
  • Number of Pins
    6
  • Package / Case
    6-TSSOP, SC-88, SOT-363
  • Transistor Type
    2 PNP - Pre-Biased (Dual)
  • Factory Lead Time
    12 Weeks
  • Resistor - Base (R1)
    4.7kOhms
  • Max Breakdown Voltage
    50V
  • Max Collector Current
    100mA
  • Max Power Dissipation
    200mW
  • Frequency - Transition
    200MHz
  • Supplier Device Package
    US6
  • Max Operating Temperature
    150°C
  • Min Operating Temperature
    -55°C
  • Emitter Base Voltage (VEBO)
    -5V
  • Continuous Collector Current
    -100mA
  • Resistor - Emitter Base (R2)
    47kOhms
  • Collector Base Voltage (VCBO)
    -50V
  • Vce Saturation (Max) @ Ib, Ic
    300mV @ 250μA, 5mA
  • Current - Collector (Ic) (Max)
    100mA
  • Collector Emitter Voltage (VCEO)
    300mV
  • Current - Collector Cutoff (Max)
    500nA
  • Collector Emitter Breakdown Voltage
    50V
  • DC Current Gain (hFE) (Min) @ Ic, Vce
    80 @ 10mA 5V
  • Voltage - Collector Emitter Breakdown (Max)
    50V

Environmental & Export Classifications

  • HTSUS
    8541.21.0095
  • RoHS Status
    ROHS3 Compliant
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)

SHIPPING GUIDE

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