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RN4606(TE85L,F)

  • In Stock: 1309823
  • Available: 3000

Reference Price(In US Dollars)

QtyUnit PriceExt.Price
1+US $0.21420US $0.21
10+US $0.14280US $1.43
30+US $0.10710US $3.21
100+US $0.08568US $8.57
500+US $0.07854US $39.27
1000+US $0.07140US $71.40

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Product Parameter

  • Manufacturer
    Toshiba
  • Manufacturer's Part #
    RN4606(TE85L,F)
  • Categories
    Discrete Semiconductor Products
  • Sub-Categories
    Transistors - Bipolar (BJT) - Arrays, Pre-Biased
  • Series
    -
  • ECCN
    EAR99
  • Mount
    Surface Mount
  • hFE Min
    80
  • Polarity
    NPN, PNP
  • Packaging
    Cut Tape (CT)
  • Published
    2014
  • Part Status
    Active
  • Subcategory
    BIP General Purpose Small Signal
  • REACH Status
    REACH Unaffected
  • Mounting Type
    Surface Mount
  • Package / Case
    SC-74, SOT-457
  • Transistor Type
    1 NPN, 1 PNP - Pre-Biased (Dual)
  • Factory Lead Time
    11 Weeks
  • Number of Elements
    2
  • Resistor - Base (R1)
    4.7k Ω
  • Element Configuration
    Dual
  • Max Breakdown Voltage
    50V
  • Max Collector Current
    100mA
  • Max Power Dissipation
    300mW
  • Frequency - Transition
    200MHz 250MHz
  • Emitter Base Voltage (VEBO)
    5V
  • Transistor Element Material
    SILICON
  • Continuous Collector Current
    100mA
  • Resistor - Emitter Base (R2)
    47k Ω
  • Vce Saturation (Max) @ Ib, Ic
    300mV @ 250μA, 5mA
  • Collector Emitter Voltage (VCEO)
    300mV
  • Current - Collector Cutoff (Max)
    100μA ICBO
  • Collector Emitter Breakdown Voltage
    50V
  • DC Current Gain (hFE) (Min) @ Ic, Vce
    80 @ 10mA 5V

Environmental & Export Classifications

  • HTSUS
    8541.21.0095
  • RoHS Status
    ROHS3 Compliant
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)

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