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RN4910,LF

  • Available: 3000

Reference Price(In US Dollars)

QtyUnit PriceExt.Price
1+US $0.13230US $0.13
10+US $0.08820US $0.88
30+US $0.06615US $1.98
100+US $0.05292US $5.29
500+US $0.04851US $24.26
1000+US $0.04410US $44.10

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Product Parameter

  • Manufacturer
    Toshiba
  • Manufacturer's Part No.
    RN4910,LF
  • Categories
    Discrete Semiconductor Products
  • Sub-Categories
    Transistors - Bipolar (BJT) - Arrays, Pre-Biased
  • Series
    -
  • ECCN
    EAR99
  • Mount
    Surface Mount
  • Width
    1.25mm
  • Height
    900μm
  • Length
    2mm
  • hFE Min
    120
  • Polarity
    NPN, PNP
  • Packaging
    Cut Tape (CT)
  • Published
    2014
  • Part Status
    Discontinued
  • Power - Max
    200mW
  • Mounting Type
    Surface Mount
  • Number of Pins
    6
  • Package / Case
    6-TSSOP, SC-88, SOT-363
  • Transistor Type
    1 NPN, 1 PNP - Pre-Biased (Dual)
  • Factory Lead Time
    12 Weeks
  • Number of Channels
    2
  • Resistor - Base (R1)
    4.7kOhms
  • Max Breakdown Voltage
    50V
  • Max Collector Current
    100mA
  • Max Power Dissipation
    200mW
  • Frequency - Transition
    200MHz
  • Supplier Device Package
    US6
  • Max Operating Temperature
    150°C
  • Min Operating Temperature
    -55°C
  • Emitter Base Voltage (VEBO)
    5V
  • Continuous Collector Current
    100mA
  • Collector Base Voltage (VCBO)
    50V
  • Vce Saturation (Max) @ Ib, Ic
    300mV @ 250μA, 5mA
  • Current - Collector (Ic) (Max)
    100mA
  • Collector Emitter Voltage (VCEO)
    50V
  • Current - Collector Cutoff (Max)
    100nA ICBO
  • Collector Emitter Breakdown Voltage
    50V
  • DC Current Gain (hFE) (Min) @ Ic, Vce
    120 @ 1mA 5V
  • Voltage - Collector Emitter Breakdown (Max)
    50V

Environmental & Export Classifications

  • HTSUS
    8541.21.0095
  • RoHS Status
    ROHS3 Compliant
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)

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