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RN4982,LF(CT

  • Available: 27000

Reference Price(In US Dollars)

QtyUnit PriceExt.Price
1+US $0.05670US $0.06
10+US $0.03780US $0.38
30+US $0.02835US $0.85
100+US $0.02268US $2.27
500+US $0.02079US $10.40
1000+US $0.01890US $18.90

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Product Parameter

  • Manufacturer
    Toshiba
  • Manufacturer's Part No.
    RN4982,LF(CT
  • Categories
    Discrete Semiconductor Products
  • Sub-Categories
    Transistors - Bipolar (BJT) - Arrays, Pre-Biased
  • Series
    -
  • ECCN
    EAR99
  • Mount
    Surface Mount
  • Weight
    6.010099mg
  • hFE Min
    50
  • Polarity
    NPN, PNP
  • Packaging
    Cut Tape (CT)
  • Published
    2014
  • Part Status
    Active
  • Pbfree Code
    yes
  • Power - Max
    200mW
  • REACH Status
    REACH Unaffected
  • Mounting Type
    Surface Mount
  • Terminal Form
    GULL WING
  • Package / Case
    6-TSSOP, SC-88, SOT-363
  • Transistor Type
    1 NPN, 1 PNP - Pre-Biased (Dual)
  • Factory Lead Time
    12 Weeks
  • Additional Feature
    BUILT IN BIAS RESISTANCE RATIO IS 1
  • Number of Channels
    2
  • Number of Elements
    2
  • Resistor - Base (R1)
    10k Ω
  • Transition Frequency
    250MHz
  • Max Breakdown Voltage
    50V
  • Max Collector Current
    100mA
  • Max Power Dissipation
    200mW
  • Reach Compliance Code
    unknown
  • Frequency - Transition
    250MHz 200MHz
  • Number of Terminations
    6
  • Transistor Application
    SWITCHING
  • Emitter Base Voltage (VEBO)
    -10V
  • Transistor Element Material
    SILICON
  • Continuous Collector Current
    -100mA
  • Resistor - Emitter Base (R2)
    10k Ω
  • Vce Saturation (Max) @ Ib, Ic
    300mV @ 250μA, 5mA
  • Collector Emitter Voltage (VCEO)
    300mV
  • Current - Collector Cutoff (Max)
    100μA ICBO
  • Collector Emitter Breakdown Voltage
    50V
  • DC Current Gain (hFE) (Min) @ Ic, Vce
    50 @ 10mA 5V

Environmental & Export Classifications

  • HTSUS
    8541.21.0075
  • RoHS Status
    ROHS3 Compliant
  • JESD-30 Code
    R-PDSO-G6
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)

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