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RN4989FE,LXHF(CT

  • Available: 36046

Reference Price(In US Dollars)

QtyUnit PriceExt.Price
1+US $0.39000US $0.39

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Product Parameter

  • Manufacturer
    Toshiba
  • Manufacturer's Part No.
    RN4989FE,LXHF(CT
  • Categories
    Discrete Semiconductor Products
  • Sub-Categories
    Transistors - Bipolar (BJT) - Arrays, Pre-Biased
  • Series
  • Mfr
    Toshiba Semiconductor and Storage
  • ECCN
    EAR99
  • Power - Max
    100mW
  • Mounting Type
    Surface Mount
  • Package / Case
    SOT-563, SOT-666
  • Transistor Type
    1 NPN, 1 PNP - Pre-Biased (Dual)
  • Resistor - Base (R1)
    47kOhms
  • Frequency - Transition
    250MHz, 200MHz
  • Supplier Device Package
    ES6
  • Resistor - Emitter Base (R2)
    22kOhms
  • Vce Saturation (Max) @ Ib, Ic
    300mV @ 250μA, 5mA
  • Current - Collector (Ic) (Max)
    100mA
  • Current - Collector Cutoff (Max)
    500nA
  • DC Current Gain (hFE) (Min) @ Ic, Vce
    70 @ 10mA, 5V
  • Voltage - Collector Emitter Breakdown (Max)
    50V

Environmental & Export Classifications

  • HTSUS
    8541.21.0095
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)

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