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RU1J002YNTCL

  • In Stock: 100
  • Available: 797000

Reference Price(In US Dollars)

QtyUnit PriceExt.Price
1+US $1.14000US $1.14
10+US $0.76000US $7.60
30+US $0.57000US $17.10
100+US $0.45600US $45.60
500+US $0.41800US $209.00
1000+US $0.38000US $380.00

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  • Description
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Description

The RU1J002YNTCL is a semiconductor device manufactured by Rohm Semiconductor, designed primarily for use in power management applications. This component is a part of the company's lineup of high-performance power MOSFETs, which are essential for efficient power conversion and switching in various electronic devices.

Key Features:

  1. Type: The RU1J002YNTCL is a N-channel MOSFET, which means it uses electrons as the charge carriers, allowing for faster switching speeds and lower on-resistance compared to P-channel devices.

  2. Voltage Rating: This MOSFET typically has a high breakdown voltage, making it suitable for applications that require robust performance under high-voltage conditions. The specific voltage rating is often around 30V, but it is essential to check the datasheet for precise specifications.

  3. Current Rating: The device can handle significant continuous drain current, often in the range of several amperes, which makes it ideal for applications such as DC-DC converters, motor drivers, and power supplies.

  4. On-Resistance (RDS(on)): One of the standout features of the RU1J002YNTCL is its low on-resistance, which minimizes power loss during operation. This characteristic is crucial for improving the efficiency of power circuits and reducing heat generation.

  5. Package Type: The RU1J002YNTCL is typically housed in a compact surface-mount package, such as the SOP-8 or similar, which facilitates easy integration into printed circuit boards (PCBs) and helps save space in electronic designs.

  6. Thermal Performance: The device is designed to operate efficiently at elevated temperatures, with a specified maximum junction temperature that allows it to function reliably in demanding environments.

  7. Gate Threshold Voltage: The gate threshold voltage is optimized for compatibility with standard logic levels, ensuring that the MOSFET can be easily driven by microcontrollers and other digital logic devices.

Applications:

The RU1J002YNTCL is suitable for a wide range of applications, including:

  • Power Supply Circuits: Used in switching power supplies to improve efficiency and reduce energy loss.
  • Motor Control: Ideal for driving motors in various applications, including robotics and automotive systems.
  • LED Drivers: Employed in circuits designed to drive LED lighting, ensuring stable and efficient operation.
  • Battery Management Systems: Utilized in systems that manage battery charging and discharging, enhancing overall battery life and performance.

Conclusion:

Overall, the RU1J002YNTCL from Rohm Semiconductor is a versatile and efficient N-channel MOSFET that meets the demands of modern electronic applications. Its combination of high voltage and current ratings, low on-resistance, and compact packaging makes it a popular choice among engineers and designers looking to optimize power management in their projects. For specific applications and detailed electrical characteristics, referring to the official datasheet is recommended.

Alternatives

Functional Equivalent (FE) materials, including Fused Filament Fabrication (FFF) form, assembly, and functionally compatible substitute materials.

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