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SBC857BDW1T1G

  • In Stock: 42000
  • Available: 2362248

Reference Price(In US Dollars)

QtyUnit PriceExt.Price
1+US $0.09000US $0.09
10+US $0.06000US $0.60
30+US $0.04500US $1.35
100+US $0.03600US $3.60
500+US $0.03300US $16.50
1000+US $0.03000US $30.00

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Quick RFQ
  • Description
  • Alternatives
  • Shopping Guide
Description

The SBC857BDW1T1G is a small-signal bipolar transistor manufactured by ON Semiconductor, a global leader in semiconductor solutions. This transistor is designed for general-purpose amplification and switching applications in electronic circuits. Here's a detailed overview:

Key Features:

  • Bipolar Transistor: The SBC857BDW1T1G is a bipolar junction transistor (BJT) with NPN (negative-positive-negative) polarity, suitable for amplifying and switching electronic signals.
  • High Gain: It offers high current gain (hFE) and power gain, making it well-suited for low-power amplification tasks in various electronic circuits.
  • Low Noise: This transistor features low noise characteristics, minimizing signal distortion and interference in amplification applications, particularly in audio and radio-frequency (RF) circuits.
  • Medium Power: With a moderate power dissipation rating, the SBC857BDW1T1G can handle moderate power levels, allowing for reliable performance in small-signal amplification and switching tasks.
  • Surface-Mount Package: It comes in a compact surface-mount package (SOT-363), enabling easy integration onto printed circuit boards (PCBs) and space-efficient designs in electronic devices.
  • High-Speed Switching: The transistor offers fast switching speeds, making it suitable for applications requiring rapid on-off transitions, such as digital logic circuits and switching power supplies.
  • Wide Operating Temperature Range: Designed to operate over a wide temperature range, the SBC857BDW1T1G is suitable for use in various environmental conditions, ensuring reliable performance in demanding applications.
  • RoHS Compliance: The transistor complies with the Restriction of Hazardous Substances (RoHS) directive, ensuring that it is free from harmful substances such as lead (Pb), making it environmentally friendly and safe for use in electronic products.

Applications:

  • Amplification: The SBC857BDW1T1G transistor is commonly used for signal amplification tasks in audio amplifiers, microphone preamplifiers, sensor interfaces, and other low-power analog circuits.
  • Switching: It finds application as a switch in digital logic circuits, relay drivers, motor control circuits, and other applications requiring fast and reliable switching of electronic signals.
  • Oscillators: The transistor can be used in oscillator circuits for generating clock signals, local oscillators, and frequency synthesis in communication systems, test equipment, and signal generators.
  • Voltage Regulation: It is employed in voltage regulator circuits for voltage stabilization and regulation in power supplies, battery chargers, and voltage reference circuits.
  • RF Circuits: The SBC857BDW1T1G is suitable for RF amplification and mixing in radio transmitters, receivers, wireless communication systems, and RF test equipment.
Alternatives

Functional Equivalent (FE) materials, including Fused Filament Fabrication (FFF) form, assembly, and functionally compatible substitute materials.

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