SFT1345-TL-H
- Manufacturer's Part No.:SFT1345-TL-H
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- Description:MOSFET P-CH 100V 11A TP-FA
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- In Stock: 380
- Available: 154761
Reference Price(In US Dollars)
Qty | Unit Price | Ext.Price |
---|---|---|
1+ | US $2.26800 | US $2.27 |
10+ | US $1.51200 | US $15.12 |
30+ | US $1.13400 | US $34.02 |
100+ | US $0.90720 | US $90.72 |
500+ | US $0.83160 | US $415.80 |
1000+ | US $0.75600 | US $756.00 |
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- Description
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The SFT1345-TL-H is a high-performance NPN transistor manufactured by ON Semiconductor, designed for various applications in electronic circuits. This transistor is particularly noted for its versatility in switching and amplification tasks, making it suitable for use in audio, RF, and general-purpose applications.
Key Features:
- Type: NPN Bipolar Junction Transistor (BJT)
- Package: The SFT1345-TL-H typically comes in a TO-220 package, which is a standard for power transistors. This package provides good thermal performance and allows for easy mounting on heat sinks.
- Maximum Collector-Emitter Voltage (Vce): The transistor can handle a maximum Vce of around 60V, making it suitable for high-voltage applications.
- Maximum Collector Current (Ic): It supports a maximum collector current of approximately 8A, allowing it to drive significant loads.
- Gain (hFE): The transistor exhibits a high current gain (hFE), typically in the range of 50 to 150, depending on the collector current, which enhances its efficiency in amplification applications.
- Transition Frequency (fT): The SFT1345-TL-H has a transition frequency of around 100 MHz, indicating its capability for high-frequency applications.
- Thermal Resistance: The thermal resistance from junction to case is low, which helps in managing heat dissipation effectively during operation.
Electrical Characteristics:
- Collector-Base Breakdown Voltage (V(BR)CBO): Typically around 60V, ensuring reliable operation in high-voltage environments.
- Emitter-Base Breakdown Voltage (V(BR)EBO): Generally around 5V, providing additional protection against reverse bias conditions.
- Saturation Voltage (VCE(sat)): Low saturation voltage, typically around 1V at high currents, which is beneficial for power efficiency.
Applications:
The SFT1345-TL-H is widely used in various applications, including:
- Audio Amplifiers: Its high gain and low distortion characteristics make it ideal for audio amplification circuits.
- Switching Regulators: The transistor can be used in power supply circuits where efficient switching is required.
- RF Amplifiers: Its high transition frequency allows it to be used in radio frequency applications.
- Motor Drivers: The ability to handle high currents makes it suitable for driving motors in various electronic devices.
Conclusion:
The SFT1345-TL-H from ON Semiconductor is a robust and versatile NPN transistor that offers excellent performance in a wide range of electronic applications. Its combination of high voltage and current ratings, along with good thermal management capabilities, makes it a reliable choice for engineers and designers looking to implement efficient and effective circuit solutions.
Functional Equivalent (FE) materials, including Fused Filament Fabrication (FFF) form, assembly, and functionally compatible substitute materials.
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