SGL50N60RUFDTU
- Manufacturer's Part No.:SGL50N60RUFDTU
- Manufacturer:
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- Series:-
- Description:IGBT 600V 80A 250W TO264
- Datasheet:
- Quantity:RFQAdd to RFQ List
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- Available: 726
Reference Price(In US Dollars)
Qty | Unit Price | Ext.Price |
---|---|---|
1+ | US $8.96568 | US $8.97 |
10+ | US $8.06911 | US $80.69 |
30+ | US $6.27598 | US $188.28 |
100+ | US $5.15527 | US $515.53 |
500+ | US $4.93112 | US $2465.56 |
1000+ | US $4.48284 | US $4482.84 |
Do you want a lower wholesale price? Please send us an inquiry, and we will respond immediately.
Product Parameter
- ManufacturerON Semiconductor
- Manufacturer's Part No.SGL50N60RUFDTU
- CategoriesDiscrete Semiconductor Products
- Sub-CategoriesTransistors - IGBTs - Single
- Series-
- ECCNEAR99
- MountThrough Hole
- Width5mm
- Height26mm
- Length20mm
- Weight6.756g
- HTS Code8541.29.00.95
- Lead FreeLead Free
- PackagingTube
- Published2013
- Input TypeStandard
- Gate Charge145nC
- Part StatusActive
- Pbfree Codeyes
- SubcategoryInsulated Gate BIP Transistors
- REACH StatusREACH Unaffected
- Turn On Time119 ns
- Mounting TypeThrough Hole
- Current Rating40A
- Number of Pins3
- Package / CaseTO-264-3, TO-264AA
- Test Condition300V, 50A, 5.9 Ω, 15V
- Contact PlatingTin
- Lifecycle StatusACTIVE (Last Updated: 11 hours ago)
- Switching Energy1.68mJ (on), 1.03mJ (off)
- Factory Lead Time5 Weeks
- Power Dissipation250W
- Additional FeatureLOW CONDUCTION LOSS, HIGH SPEED SWITCHING
- Fall Time-Max (tf)160ns
- Number of Elements1
- Turn On Delay Time26 ns
- Voltage - Rated DC100V
- Radiation HardeningNo
- Td (on/off) @ 25°C26ns/66ns
- Turn-Off Delay Time66 ns
- Element ConfigurationSingle
- Max Collector Current80A
- Max Power Dissipation250W
- Operating Temperature-55°C~150°C TJ
- Polarity/Channel TypeN-CHANNEL
- Reverse Recovery Time100ns
- Number of Terminations3
- Transistor ApplicationMOTOR CONTROL
- Vce(on) (Max) @ Vge, Ic2.8V @ 15V, 50A
- Gate-Emitter Voltage-Max20V
- Turn Off Time-Nom (toff)329 ns
- Transistor Element MaterialSILICON
- Continuous Collector Current80A
- Gate-Emitter Thr Voltage-Max8V
- Collector Emitter Voltage (VCEO)600V
- Current - Collector Pulsed (Icm)150A
- Collector Emitter Breakdown Voltage600V
- Collector Emitter Saturation Voltage2.2V
Environmental & Export Classifications
- HTSUS8541.29.0095
- ECCN CodeEAR99
- REACH SVHCNo SVHC
- RoHS StatusROHS3 Compliant
- JESD-609 Codee3
- Moisture Sensitivity Level (MSL)1 (Unlimited)
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