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SGL50N60RUFDTU

  • Available: 726

Reference Price(In US Dollars)

QtyUnit PriceExt.Price
1+US $8.96568US $8.97
10+US $8.06911US $80.69
30+US $6.27598US $188.28
100+US $5.15527US $515.53
500+US $4.93112US $2465.56
1000+US $4.48284US $4482.84

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Product Parameter

  • Manufacturer
    ON Semiconductor
  • Manufacturer's Part No.
    SGL50N60RUFDTU
  • Categories
    Discrete Semiconductor Products
  • Sub-Categories
    Transistors - IGBTs - Single
  • Series
    -
  • ECCN
    EAR99
  • Mount
    Through Hole
  • Width
    5mm
  • Height
    26mm
  • Length
    20mm
  • Weight
    6.756g
  • HTS Code
    8541.29.00.95
  • Lead Free
    Lead Free
  • Packaging
    Tube
  • Published
    2013
  • Input Type
    Standard
  • Gate Charge
    145nC
  • Part Status
    Active
  • Pbfree Code
    yes
  • Subcategory
    Insulated Gate BIP Transistors
  • REACH Status
    REACH Unaffected
  • Turn On Time
    119 ns
  • Mounting Type
    Through Hole
  • Current Rating
    40A
  • Number of Pins
    3
  • Package / Case
    TO-264-3, TO-264AA
  • Test Condition
    300V, 50A, 5.9 Ω, 15V
  • Contact Plating
    Tin
  • Lifecycle Status
    ACTIVE (Last Updated: 11 hours ago)
  • Switching Energy
    1.68mJ (on), 1.03mJ (off)
  • Factory Lead Time
    5 Weeks
  • Power Dissipation
    250W
  • Additional Feature
    LOW CONDUCTION LOSS, HIGH SPEED SWITCHING
  • Fall Time-Max (tf)
    160ns
  • Number of Elements
    1
  • Turn On Delay Time
    26 ns
  • Voltage - Rated DC
    100V
  • Radiation Hardening
    No
  • Td (on/off) @ 25°C
    26ns/66ns
  • Turn-Off Delay Time
    66 ns
  • Element Configuration
    Single
  • Max Collector Current
    80A
  • Max Power Dissipation
    250W
  • Operating Temperature
    -55°C~150°C TJ
  • Polarity/Channel Type
    N-CHANNEL
  • Reverse Recovery Time
    100ns
  • Number of Terminations
    3
  • Transistor Application
    MOTOR CONTROL
  • Vce(on) (Max) @ Vge, Ic
    2.8V @ 15V, 50A
  • Gate-Emitter Voltage-Max
    20V
  • Turn Off Time-Nom (toff)
    329 ns
  • Transistor Element Material
    SILICON
  • Continuous Collector Current
    80A
  • Gate-Emitter Thr Voltage-Max
    8V
  • Collector Emitter Voltage (VCEO)
    600V
  • Current - Collector Pulsed (Icm)
    150A
  • Collector Emitter Breakdown Voltage
    600V
  • Collector Emitter Saturation Voltage
    2.2V

Environmental & Export Classifications

  • HTSUS
    8541.29.0095
  • ECCN Code
    EAR99
  • REACH SVHC
    No SVHC
  • RoHS Status
    ROHS3 Compliant
  • JESD-609 Code
    e3
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)

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