SI1012R-T1-GE3
- Manufacturer's Part No.:SI1012R-T1-GE3
- Manufacturer:
- Categories:
- Sub-Categories:
- Series:TrenchFET®
- Description:MOSFET N-CH 20V 500MA SC-75A
- Datasheet:
- Quantity:Buy NowAdd to Cart
- Payment:
- Delivery:
- In Stock: 460000
- Available: 610452
- Updated: 1 Day 15 HRS ago
Reference Price(In US Dollars)
Qty | Unit Price | Ext.Price |
---|---|---|
1+ | US $0.45288 | US $0.45 |
10+ | US $0.30192 | US $3.02 |
30+ | US $0.22644 | US $6.79 |
100+ | US $0.18115 | US $18.12 |
500+ | US $0.16606 | US $83.03 |
1000+ | US $0.15096 | US $150.96 |
Do you want a lower wholesale price? Please send us an inquiry, and we will respond immediately.
Product Parameter
- ManufacturerVishay
- Manufacturer's Part No.SI1012R-T1-GE3
- CategoriesDiscrete Semiconductor Products
- Sub-CategoriesTransistors - FETs, MOSFETs - Single
- SeriesTrenchFET®
- Time@Peak Reflow Temperature-Max (s)30
- Package / CaseSC-75A
- Part StatusActive
- Operating Temperature-55°C~150°C TJ
- Factory Lead Time14 Weeks
- MountSurface Mount
- Number of Pins3
- PackagingTape & Reel (TR)
- SubcategoryFET General Purpose Power
- Number of Terminations3
- Terminal FinishMatte Tin (Sn)
- Terminal PositionDUAL
- Terminal FormGULL WING
- Peak Reflow Temperature (Cel)260
- Pin Count3
- Number of Elements1
- Lead FreeLead Free
- Radiation HardeningNo
- Published2012
- Pbfree Codeyes
- Additional FeatureLOW THRESHOLD
- Height800μm
- Length1.58mm
- Width760μm
- Mounting TypeSurface Mount
- Transistor Element MaterialSILICON
- Element ConfigurationSingle
- Transistor ApplicationSWITCHING
- Power Dissipation150mW
- Max Junction Temperature (Tj)150°C
- Number of Channels1
- TechnologyMOSFET (Metal Oxide)
- Power Dissipation-Max150mW Ta
- Turn On Delay Time5 ns
- Turn-Off Delay Time25 ns
- Operating ModeENHANCEMENT MODE
- Drain Current-Max (Abs) (ID)0.5A
- Continuous Drain Current (ID)600mA
- Resistance700MOhm
- Gate to Source Voltage (Vgs)6V
- Drain to Source Breakdown Voltage20V
- Threshold Voltage800mV
- FET TypeN-Channel
- Vgs(th) (Max) @ Id900mV @ 250μA
- Gate Charge (Qg) (Max) @ Vgs0.75nC @ 4.5V
- Vgs (Max)±6V
- Rise Time5ns
- Fall Time (Typ)5 ns
- Current - Continuous Drain (Id) @ 25°C500mA Ta
- Drive Voltage (Max Rds On,Min Rds On)1.8V 4.5V
- Rds On (Max) @ Id, Vgs700m Ω @ 600mA, 4.5V
Environmental & Export Classifications
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- ECCN CodeEAR99
- RoHS StatusROHS3 Compliant
- JESD-609 Codee3
- REACH SVHCNo SVHC
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