SI1025X-T1-E3
- Manufacturer's Part No.:SI1025X-T1-E3
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- Series:TrenchFET®
- Description:MOSFET 2P-CH 60V 0.19A SOT563F
- Datasheet:
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- In Stock: 20929
- Available: 13369
Reference Price(In US Dollars)
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Product Parameter
- ManufacturerVishay
- Manufacturer's Part No.SI1025X-T1-E3
- CategoriesDiscrete Semiconductor Products
- Sub-CategoriesTransistors - FETs, MOSFETs - Arrays
- SeriesTrenchFET®
- ECCNEAR99
- MountSurface Mount
- Width1.2mm
- Height600μm
- Length1.7mm
- Weight32.006612mg
- FET Type2 P-Channel (Dual)
- Lead FreeLead Free
- PackagingTape & Reel (TR)
- Published2012
- Rds On Max4 Ω
- Resistance4Ohm
- FET FeatureLogic Level Gate
- Part StatusObsolete
- Power - Max250mW
- REACH StatusREACH Unaffected
- Mounting TypeSurface Mount
- Number of Pins6
- Package / CaseSOT-563, SOT-666
- Base Part NumberSI1025
- Input Capacitance23pF
- Power Dissipation250mW
- Threshold Voltage-3V
- Number of Channels2
- Number of Elements2
- Vgs(th) (Max) @ Id3V @ 250μA
- Radiation HardeningNo
- Element ConfigurationDual
- Max Power Dissipation250mW
- Operating Temperature-55°C~150°C TJ
- Rds On (Max) @ Id, Vgs4Ohm @ 500mA, 10V
- Supplier Device PackageSC-89-6
- Max Operating Temperature150°C
- Min Operating Temperature-55°C
- Drain to Source Resistance8Ohm
- Gate Charge (Qg) (Max) @ Vgs1.7nC @ 15V
- Gate to Source Voltage (Vgs)20V
- Continuous Drain Current (ID)500mA
- Drain to Source Voltage (Vdss)60V
- Drain to Source Breakdown Voltage-60V
- Input Capacitance (Ciss) (Max) @ Vds23pF @ 25V
- Current - Continuous Drain (Id) @ 25°C190mA
Environmental & Export Classifications
- HTSUS8541.21.0095
- REACH SVHCNo SVHC
- RoHS StatusROHS3 Compliant
- Moisture Sensitivity Level (MSL)1 (Unlimited)
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