EnglishEnglish
My Account

Hello welcome to Chipsmall!

  • My ProfileMy Profile
  • Address ManagementAddress Management
  • Change PasswordChange Password
  • Order Status & HistoryOrder Status & History
Cart
RFQ List
All PRODUCTS
Image is for your reference only, please check specifications for details
iconCompare
icon

SI1922EDH-T1-GE3

  • In Stock: 14900
  • Available: 575693

Reference Price(In US Dollars)

QtyUnit PriceExt.Price
1+US $0.55800US $0.56
10+US $0.37200US $3.72
30+US $0.27900US $8.37
100+US $0.22320US $22.32
500+US $0.20460US $102.30
1000+US $0.18600US $186.00

Do you want a lower wholesale price? Please send us an inquiry, and we will respond immediately.

Quick RFQ

Product Parameter

  • Manufacturer
    Vishay
  • Manufacturer's Part No.
    SI1922EDH-T1-GE3
  • Categories
    Discrete Semiconductor Products
  • Sub-Categories
    Transistors - FETs, MOSFETs - Arrays
  • Series
    TrenchFET®
  • ECCN
    EAR99
  • Mount
    Surface Mount
  • Height
    1.1mm
  • Weight
    7.512624mg
  • FET Type
    2 N-Channel (Dual)
  • Lead Free
    Lead Free
  • Packaging
    Digi-Reel®
  • Pin Count
    6
  • Rise Time
    80ns
  • FET Feature
    Logic Level Gate
  • Part Status
    Active
  • Subcategory
    FET General Purpose Power
  • REACH Status
    REACH Unaffected
  • Mounting Type
    Surface Mount
  • Terminal Form
    GULL WING
  • FET Technology
    METAL-OXIDE SEMICONDUCTOR
  • Number of Pins
    6
  • Operating Mode
    ENHANCEMENT MODE
  • Package / Case
    6-TSSOP, SC-88, SOT-363
  • Fall Time (Typ)
    220 ns
  • Terminal Finish
    Matte Tin (Sn)
  • Base Part Number
    SI1922
  • Factory Lead Time
    14 Weeks
  • Power Dissipation
    740mW
  • Threshold Voltage
    400mV
  • Number of Elements
    2
  • Turn On Delay Time
    22 ns
  • Vgs(th) (Max) @ Id
    1V @ 250μA
  • Radiation Hardening
    No
  • Turn-Off Delay Time
    645 ns
  • Element Configuration
    Dual
  • Max Power Dissipation
    1.25W
  • Operating Temperature
    -55°C~150°C TJ
  • Number of Terminations
    6
  • Rds On (Max) @ Id, Vgs
    198m Ω @ 1A, 4.5V
  • Transistor Application
    SWITCHING
  • Reflow Temperature-Max (s)
    30
  • Transistor Element Material
    SILICON
  • Gate Charge (Qg) (Max) @ Vgs
    2.5nC @ 8V
  • Gate to Source Voltage (Vgs)
    8V
  • Continuous Drain Current (ID)
    1.3A
  • Max Junction Temperature (Tj)
    150°C
  • Peak Reflow Temperature (Cel)
    260
  • Drain to Source Voltage (Vdss)
    20V
  • Drain to Source Breakdown Voltage
    20V

Environmental & Export Classifications

  • HTSUS
    8541.29.0095
  • ECCN Code
    EAR99
  • REACH SVHC
    No SVHC
  • RoHS Status
    ROHS3 Compliant
  • JESD-609 Code
    e3
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)

SHIPPING GUIDE

  • Shipping Methods

    Rest assured that your orders will be handled by these trusted providers, such as DHL, FedEx, SF, and UPS.

  • Shipping Cost

    Shipping starts at $40 but varies for destinations like South Africa, Brazil, India, and more. The actual shipping charges depend on time zone, country, and package weight/volume.

  • Delivery Time

    We ship orders once daily, around 5 p.m., except on Sundays. The estimated delivery time may vary depending on the courier service you choose, but typically ranges from 5 to 7 business days.

Index:

  • Professional Platform

  • Full-speed Delivery

  • Wide Variety of Products

  • 365 Days of Quality Assurance