SI1926DL-T1-E3
- Manufacturer's Part No.:SI1926DL-T1-E3
- Manufacturer:
- Categories:
- Sub-Categories:
- Series:TrenchFET®
- Description:MOSFET 2N-CH 60V 0.37A SC-70-6
- Datasheet:
- Quantity:RFQAdd to RFQ List
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- In Stock: 113959
- Available: 575693
Reference Price(In US Dollars)
Qty | Unit Price | Ext.Price |
---|---|---|
1+ | US $2.60300 | US $2.60 |
10+ | US $2.34270 | US $23.43 |
30+ | US $1.82210 | US $54.66 |
100+ | US $1.49673 | US $149.67 |
500+ | US $1.43165 | US $715.83 |
1000+ | US $1.30150 | US $1301.50 |
Do you want a lower wholesale price? Please send us an inquiry, and we will respond immediately.
Product Parameter
- ManufacturerVishay
- Manufacturer's Part No.SI1926DL-T1-E3
- CategoriesDiscrete Semiconductor Products
- Sub-CategoriesTransistors - FETs, MOSFETs - Arrays
- SeriesTrenchFET®
- ECCNEAR99
- MountSurface Mount
- Width1.25mm
- Height1mm
- Length2mm
- Weight28.009329mg
- FET Type2 N-Channel (Dual)
- Lead FreeLead Free
- PackagingTape & Reel (TR)
- Pin Count6
- Published2015
- Rise Time12ns
- Resistance1.4Ohm
- FET FeatureLogic Level Gate
- Part StatusActive
- Pbfree Codeyes
- SubcategoryFET General Purpose Power
- REACH StatusREACH Unaffected
- Mounting TypeSurface Mount
- Terminal FormGULL WING
- FET TechnologyMETAL-OXIDE SEMICONDUCTOR
- Number of Pins6
- Operating ModeENHANCEMENT MODE
- Package / Case6-TSSOP, SC-88, SOT-363
- Contact PlatingTin
- Fall Time (Typ)12 ns
- Base Part NumberSI1926
- Factory Lead Time14 Weeks
- Power Dissipation300mW
- Threshold Voltage2.5V
- Number of Elements2
- Turn On Delay Time6.5 ns
- Vgs(th) (Max) @ Id2.5V @ 250μA
- Radiation HardeningNo
- Turn-Off Delay Time13 ns
- Element ConfigurationDual
- Max Power Dissipation510mW
- Operating Temperature-55°C~150°C TJ
- Number of Terminations6
- Rds On (Max) @ Id, Vgs1.4 Ω @ 340mA, 10V
- Transistor ApplicationSWITCHING
- Reflow Temperature-Max (s)40
- Transistor Element MaterialSILICON
- Drain Current-Max (Abs) (ID)0.34A
- Gate Charge (Qg) (Max) @ Vgs1.4nC @ 10V
- Gate to Source Voltage (Vgs)20V
- Continuous Drain Current (ID)370mA
- Peak Reflow Temperature (Cel)260
- Drain to Source Voltage (Vdss)60V
- Drain to Source Breakdown Voltage60V
- Input Capacitance (Ciss) (Max) @ Vds18.5pF @ 30V
Environmental & Export Classifications
- HTSUS8541.21.0095
- ECCN CodeEAR99
- REACH SVHCNo SVHC
- RoHS StatusROHS3 Compliant
- JESD-609 Codee3
- Moisture Sensitivity Level (MSL)1 (Unlimited)
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