SI1958DH-T1-E3
- Manufacturer's Part No.:SI1958DH-T1-E3
- Manufacturer:
- Categories:
- Sub-Categories:
- Series:TrenchFET®
- Description:MOSFET 2N-CH 20V 1.3A SC70-6
- Datasheet:
- Quantity:RFQAdd to RFQ List
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- Available: 13490
Reference Price(In US Dollars)
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1+ | US $0.00000 | US $0.00 |
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Product Parameter
- ManufacturerVishay
- Manufacturer's Part No.SI1958DH-T1-E3
- CategoriesDiscrete Semiconductor Products
- Sub-CategoriesTransistors - FETs, MOSFETs - Arrays
- SeriesTrenchFET®
- ECCNEAR99
- MountSurface Mount
- FET Type2 N-Channel (Dual)
- Lead FreeLead Free
- PackagingTape & Reel (TR)
- Pin Count6
- Published2013
- Rise Time25ns
- Resistance340mOhm
- FET FeatureLogic Level Gate
- Nominal Vgs1.6 V
- Part StatusObsolete
- Pbfree Codeyes
- Power - Max1.25W
- SubcategoryFET General Purpose Powers
- TerminationSMD/SMT
- REACH StatusREACH Unaffected
- Mounting TypeSurface Mount
- Terminal FormGULL WING
- FET TechnologyMETAL-OXIDE SEMICONDUCTOR
- Number of Pins6
- Operating ModeENHANCEMENT MODE
- Package / Case6-TSSOP, SC-88, SOT-363
- Fall Time (Typ)25 ns
- Terminal FinishMATTE TIN
- Base Part NumberSI1958
- Power Dissipation740mW
- Threshold Voltage1.6V
- Number of Elements2
- Turn On Delay Time8 ns
- Vgs(th) (Max) @ Id1.6V @ 250μA
- Dual Supply Voltage20V
- Radiation HardeningNo
- Turn-Off Delay Time10 ns
- Element ConfigurationDual
- Max Power Dissipation740mW
- Operating Temperature-55°C~150°C TJ
- Number of Terminations6
- Rds On (Max) @ Id, Vgs205m Ω @ 1.3A, 4.5V
- Transistor ApplicationSWITCHING
- Reflow Temperature-Max (s)40
- Transistor Element MaterialSILICON
- Gate Charge (Qg) (Max) @ Vgs3.8nC @ 10V
- Gate to Source Voltage (Vgs)12V
- Continuous Drain Current (ID)1.3A
- Peak Reflow Temperature (Cel)260
- Drain to Source Breakdown Voltage20V
- Input Capacitance (Ciss) (Max) @ Vds105pF @ 10V
Environmental & Export Classifications
- HTSUS8541.29.0095
- ECCN CodeEAR99
- REACH SVHCNo SVHC
- RoHS StatusROHS3 Compliant
- JESD-609 Codee3
- Moisture Sensitivity Level (MSL)1 (Unlimited)
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