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SI1965DH-T1-GE3

  • In Stock: 30000
  • Available: 471021

Reference Price(In US Dollars)

QtyUnit PriceExt.Price
1+US $12.65000US $12.65
10+US $11.38500US $113.85
30+US $8.85500US $265.65
100+US $7.27375US $727.38
500+US $6.95750US $3478.75
1000+US $6.32500US $6325.00

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Product Parameter

  • Manufacturer
    Vishay
  • Manufacturer's Part No.
    SI1965DH-T1-GE3
  • Categories
    Discrete Semiconductor Products
  • Sub-Categories
    Transistors - FETs, MOSFETs - Arrays
  • Series
    TrenchFET®
  • ECCN
    EAR99
  • Mount
    Surface Mount
  • Weight
    28.009329mg
  • FET Type
    2 P-Channel (Dual)
  • Lead Free
    Lead Free
  • Packaging
    Tape & Reel (TR)
  • Pin Count
    6
  • Published
    2010
  • Rise Time
    27ns
  • Resistance
    390mOhm
  • FET Feature
    Logic Level Gate
  • Nominal Vgs
    -400 mV
  • Part Status
    Active
  • Pbfree Code
    yes
  • Subcategory
    Other Transistors
  • REACH Status
    REACH Unaffected
  • Mounting Type
    Surface Mount
  • Terminal Form
    GULL WING
  • FET Technology
    METAL-OXIDE SEMICONDUCTOR
  • Number of Pins
    6
  • Operating Mode
    ENHANCEMENT MODE
  • Package / Case
    6-TSSOP, SC-88, SOT-363
  • Fall Time (Typ)
    10 ns
  • Terminal Finish
    Matte Tin (Sn)
  • Base Part Number
    SI1965
  • Factory Lead Time
    14 Weeks
  • Power Dissipation
    740mW
  • Number of Channels
    2
  • Number of Elements
    2
  • Turn On Delay Time
    12 ns
  • Vgs(th) (Max) @ Id
    1V @ 250μA
  • Radiation Hardening
    No
  • Turn-Off Delay Time
    15 ns
  • Element Configuration
    Dual
  • Max Power Dissipation
    1.25W
  • Operating Temperature
    -55°C~150°C TJ
  • Number of Terminations
    6
  • Rds On (Max) @ Id, Vgs
    390m Ω @ 1A, 4.5V
  • Transistor Application
    SWITCHING
  • Reflow Temperature-Max (s)
    30
  • Transistor Element Material
    SILICON
  • Drain Current-Max (Abs) (ID)
    1.3A
  • Gate Charge (Qg) (Max) @ Vgs
    4.2nC @ 8V
  • Gate to Source Voltage (Vgs)
    8V
  • Continuous Drain Current (ID)
    1.14A
  • Peak Reflow Temperature (Cel)
    260
  • Drain to Source Voltage (Vdss)
    12V
  • Drain to Source Breakdown Voltage
    -12V
  • Input Capacitance (Ciss) (Max) @ Vds
    120pF @ 6V
  • Current - Continuous Drain (Id) @ 25°C
    1.3A

Environmental & Export Classifications

  • HTSUS
    8541.29.0095
  • ECCN Code
    EAR99
  • REACH SVHC
    Unknown
  • RoHS Status
    ROHS3 Compliant
  • JESD-609 Code
    e3
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)

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