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SI1972DH-T1-GE3

  • Available: 12758

Reference Price(In US Dollars)

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1+US $0.00000US $0.00

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Product Parameter

  • Manufacturer
    Vishay
  • Manufacturer's Part No.
    SI1972DH-T1-GE3
  • Categories
    Discrete Semiconductor Products
  • Sub-Categories
    Transistors - FETs, MOSFETs - Arrays
  • Series
    TrenchFET®
  • ECCN
    EAR99
  • Mount
    Surface Mount
  • FET Type
    2 N-Channel (Dual)
  • Packaging
    Tape & Reel (TR)
  • Pin Count
    6
  • Published
    2009
  • FET Feature
    Standard
  • Part Status
    Obsolete
  • Pbfree Code
    yes
  • Subcategory
    FET General Purpose Power
  • REACH Status
    REACH Unaffected
  • Mounting Type
    Surface Mount
  • Terminal Form
    GULL WING
  • FET Technology
    METAL-OXIDE SEMICONDUCTOR
  • Number of Pins
    6
  • Operating Mode
    ENHANCEMENT MODE
  • Package / Case
    6-TSSOP, SC-88, SOT-363
  • Terminal Finish
    Matte Tin (Sn)
  • Base Part Number
    SI1972
  • Power Dissipation
    740mW
  • Number of Elements
    2
  • Vgs(th) (Max) @ Id
    2.8V @ 250μA
  • Radiation Hardening
    No
  • Max Power Dissipation
    1.25W
  • Operating Temperature
    -55°C~150°C TJ
  • Number of Terminations
    6
  • Rds On (Max) @ Id, Vgs
    225m Ω @ 1.3A, 10V
  • Transistor Application
    SWITCHING
  • DS Breakdown Voltage-Min
    30V
  • Reflow Temperature-Max (s)
    30
  • Transistor Element Material
    SILICON
  • Gate Charge (Qg) (Max) @ Vgs
    2.8nC @ 10V
  • Gate to Source Voltage (Vgs)
    20V
  • Continuous Drain Current (ID)
    1.3A
  • Peak Reflow Temperature (Cel)
    260
  • Drain to Source Voltage (Vdss)
    30V
  • Input Capacitance (Ciss) (Max) @ Vds
    75pF @ 15V

Environmental & Export Classifications

  • HTSUS
    8541.29.0095
  • ECCN Code
    EAR99
  • RoHS Status
    ROHS3 Compliant
  • JESD-609 Code
    e3
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)

SHIPPING GUIDE

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  • Delivery Time

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