SI2301CDS-T1-GE3

The SI2301CDS-T1-GE3 is a N-channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) manufactured by Vishay. This component is designed for a variety of applications, including power management, switching, and amplification in electronic circuits.

Key Features:

1. Type: N-channel MOSFET
2. Package: The device is typically housed in a small, surface-mount package, specifically the SOT-23 package, which allows for efficient use of space on printed circuit boards (PCBs).
3. Voltage Rating: The SI2301CDS-T1-GE3 has a maximum drain-source voltage (V_DS) rating of 20V, making it suitable for low-voltage applications.
4. Current Rating: It can handle a continuous drain current (I_D) of up to 3.9A, which provides flexibility in various circuit designs.
5. R_DS(on): The on-resistance (R_DS(on)) is low, typically around 0.045 ohms at a gate-source voltage (V_GS) of 10V, which minimizes power loss and heat generation during operation.
6. Gate Threshold Voltage: The gate threshold voltage (V_GS(th)) is in the range of 1V to 2.5V, allowing for efficient switching at lower voltages.
7. Thermal Resistance: The device has a low thermal resistance, which helps in managing heat dissipation during operation, enhancing reliability and performance.
8. Applications: Common applications include load switching, power management in portable devices, and as a switch in DC-DC converters.

Electrical Characteristics:

• Maximum Gate-Source Voltage (V_GS): ±20V
• Maximum Power Dissipation (P_D): Typically around 1.25W, depending on the thermal conditions.
• Operating Temperature Range: The device can operate in a wide temperature range, typically from -55°C to +150°C, making it suitable for various environmental conditions.

Additional Information:

• RoHS Compliant: The SI2301CDS-T1-GE3 is compliant with the Restriction of Hazardous Substances (RoHS) directive, ensuring it is free from certain hazardous materials.
• Applications: It is widely used in consumer electronics, automotive applications, and industrial equipment due to its reliability and efficiency.

Conclusion:

The SI2301CDS-T1-GE3 from Vishay is a versatile and efficient N-channel MOSFET that is well-suited for a range of low-voltage applications. Its compact size, low on-resistance, and robust electrical characteristics make it an excellent choice for designers looking to optimize performance in their electronic circuits.