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SI2302CDS-T1-GE3

  • In Stock: 150130
  • Available: 471021

Reference Price(In US Dollars)

QtyUnit PriceExt.Price
1+US $0.09119US $0.09
10+US $0.06079US $0.61
30+US $0.04559US $1.37
100+US $0.03648US $3.65
500+US $0.03344US $16.72
1000+US $0.03040US $30.40

Do you want a lower wholesale price? Please send us an inquiry, and we will respond immediately.

Quick RFQ
  • Description
  • Alternatives
  • Shopping Guide
Description

The SI2302CDS-T1-GE3 is an N-channel enhancement mode MOSFET designed for low voltage, high-speed switching applications.

Key Features:

  • Drain-to-Source Voltage (Vds): 20V
  • Gate-to-Source Voltage (Vgs): ±12V
  • Continuous Drain Current (Id): 2.8A (at 25°C)
  • Drain-Source On-Resistance (Rds(on)): 0.047Ω at Vgs = 4.5V, 0.053Ω at Vgs = 2.5V
  • Gate Charge (Qg): 6.1nC
  • Low gate drive down to 1.8V
  • Package: SOT-23
  • Fast switching speed
  • RoHS compliant and halogen-free

Applications:

  • Load switching
  • Power management in portable devices
  • DC-DC converters
  • Low voltage drive applications
  • Battery-powered circuits
Alternatives

Functional Equivalent (FE) materials, including Fused Filament Fabrication (FFF) form, assembly, and functionally compatible substitute materials.

SHIPPING GUIDE

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  • Delivery Time

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