SI2307CDS-T1-GE3

The SI2307CDS-T1-GE3 is a N-channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) manufactured by Vishay. This component is designed for various applications, including power management, switching, and amplification in electronic circuits. Here’s a detailed description of its key features and specifications:

Key Features:

1. Type: N-channel MOSFET

   • This type of MOSFET allows current to flow from the drain to the source when a positive voltage is applied to the gate.

2. Package: SO-8 (Small Outline 8-lead)

   • The SO-8 package is compact and surface-mountable, making it suitable for high-density circuit designs.

3. Voltage Rating:

   • The SI2307CDS-T1-GE3 typically has a maximum drain-source voltage (V_DS) rating of around 30V, which allows it to handle moderate voltage applications.

4. Current Rating:

   • It can handle a continuous drain current (I_D) of approximately 3.5A at a specified temperature, making it suitable for various load conditions.

5. R_DS(on):

   • The on-resistance (R_DS(on)) is low, typically around 0.045 ohms at a gate-source voltage (V_GS) of 10V. This low resistance minimizes power loss during operation, enhancing efficiency.

6. Gate Threshold Voltage (V_GS(th)):

   • The gate threshold voltage is typically in the range of 1V to 2.5V, indicating the voltage required to turn the MOSFET on. This feature allows for compatibility with low-voltage control signals.

7. Thermal Resistance:

   • The device has a thermal resistance rating that allows it to operate efficiently without overheating, which is crucial for reliability in high-power applications.

8. Applications:

   • The SI2307CDS-T1-GE3 is suitable for a variety of applications, including:
     • Power management circuits
     • Load switching
     • DC-DC converters
     • Motor control
     • Battery management systems

9. RoHS Compliance:

   • The part is RoHS compliant, meaning it is free from hazardous substances, making it environmentally friendly and suitable for use in modern electronic devices.

Electrical Characteristics:

• Maximum Drain-Source Voltage (V_DS): 30V
• Continuous Drain Current (I_D): 3.5A
• Gate-Source Voltage (V_GS): ±20V
• On-Resistance (R_DS(on)): 0.045Ω at V_GS = 10V
• Gate Threshold Voltage (V_GS(th)): 1V to 2.5V

Conclusion:

The SI2307CDS-T1-GE3 from Vishay is a versatile and efficient N-channel MOSFET that is well-suited for a range of electronic applications. Its low on-resistance, moderate voltage and current ratings, and compact packaging make it an excellent choice for designers looking to optimize performance in power management and switching applications.