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SI2312BDS-T1-GE3

  • In Stock: 50000
  • Available: 529776
  • Updated: 10 HRS ago

Reference Price(In US Dollars)

QtyUnit PriceExt.Price
1+US $0.31793US $0.32
10+US $0.21196US $2.12
30+US $0.15897US $4.77
100+US $0.12717US $12.72
500+US $0.11658US $58.29
1000+US $0.10598US $105.98

Do you want a lower wholesale price? Please send us an inquiry, and we will respond immediately.

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Product Parameter

  • Manufacturer
    Vishay
  • Manufacturer's Part No.
    SI2312BDS-T1-GE3
  • Categories
    Discrete Semiconductor Products
  • Sub-Categories
    Transistors - FETs, MOSFETs - Single
  • Series
    TrenchFET®
  • ECCN
    EAR99
  • Mount
    Surface Mount
  • Width
    1.4mm
  • Height
    1.02mm
  • Length
    3.04mm
  • Weight
    1.437803g
  • FET Type
    N-Channel
  • Lead Free
    Lead Free
  • Packaging
    Tape & Reel (TR)
  • Pin Count
    3
  • Published
    2013
  • Rise Time
    30ns
  • Vgs (Max)
    ±8V
  • Resistance
    31mOhm
  • Technology
    MOSFET (Metal Oxide)
  • Nominal Vgs
    8 V
  • Part Status
    Active
  • Pbfree Code
    yes
  • Subcategory
    FET General Purpose Power
  • Termination
    SMD/SMT
  • REACH Status
    REACH Unaffected
  • Mounting Type
    Surface Mount
  • Terminal Form
    GULL WING
  • Number of Pins
    3
  • Operating Mode
    ENHANCEMENT MODE
  • Package / Case
    TO-236-3, SC-59, SOT-23-3
  • Fall Time (Typ)
    30 ns
  • Terminal Finish
    Matte Tin (Sn)
  • Factory Lead Time
    14 Weeks
  • Power Dissipation
    750mW
  • Terminal Position
    DUAL
  • Threshold Voltage
    8V
  • Number of Channels
    1
  • Number of Elements
    1
  • Turn On Delay Time
    9 ns
  • Vgs(th) (Max) @ Id
    850mV @ 250μA
  • Dual Supply Voltage
    20V
  • Radiation Hardening
    No
  • Turn-Off Delay Time
    35 ns
  • Element Configuration
    Single
  • Operating Temperature
    -55°C~150°C TJ
  • Power Dissipation-Max
    750mW Ta
  • Number of Terminations
    3
  • Rds On (Max) @ Id, Vgs
    31m Ω @ 5A, 4.5V
  • Transistor Application
    SWITCHING
  • Reflow Temperature-Max (s)
    30
  • Transistor Element Material
    SILICON
  • Gate Charge (Qg) (Max) @ Vgs
    12nC @ 4.5V
  • Gate to Source Voltage (Vgs)
    8V
  • Continuous Drain Current (ID)
    5A
  • Peak Reflow Temperature (Cel)
    260
  • Drain to Source Breakdown Voltage
    20V
  • Drive Voltage (Max Rds On,Min Rds On)
    1.8V 4.5V
  • Current - Continuous Drain (Id) @ 25°C
    3.9A Ta

Environmental & Export Classifications

  • HTSUS
    8541.21.0095
  • ECCN Code
    EAR99
  • REACH SVHC
    Unknown
  • RoHS Status
    ROHS3 Compliant
  • JESD-609 Code
    e3
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)

SHIPPING GUIDE

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  • Shipping Cost

    Shipping starts at $40 but varies for destinations like South Africa, Brazil, India, and more. The actual shipping charges depend on time zone, country, and package weight/volume.

  • Delivery Time

    We ship orders once daily, around 5 p.m., except on Sundays. The estimated delivery time may vary depending on the courier service you choose, but typically ranges from 5 to 7 business days.

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