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SI2318A-TP

  • Available: 84000

Reference Price(In US Dollars)

QtyUnit PriceExt.Price
1+US $0.14076US $0.14
10+US $0.09384US $0.94
30+US $0.07038US $2.11
100+US $0.05630US $5.63
500+US $0.05161US $25.81
1000+US $0.04692US $46.92

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  • Description
  • Alternatives
  • Shopping Guide
Description

The SI2318A-TP is a N-channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) manufactured by Micro Commercial Components (MCC). This component is designed for a variety of applications, including power management, switching, and amplification in electronic circuits.

Key Features:

  1. Type: N-channel MOSFET

    • The N-channel configuration allows for efficient switching and amplification, making it suitable for low-side switching applications.
  2. Voltage Rating:

    • The SI2318A-TP typically has a maximum drain-source voltage (V_DS) rating of around 30V. This allows it to handle a range of applications without the risk of breakdown.
  3. Current Rating:

    • It can handle a continuous drain current (I_D) of approximately 6.9A, which makes it suitable for driving loads in various electronic devices.
  4. R_DS(on):

    • The on-resistance (R_DS(on)) is low, typically around 0.045 ohms at a gate-source voltage (V_GS) of 10V. This low on-resistance contributes to reduced power loss and improved efficiency during operation.
  5. Gate Threshold Voltage (V_GS(th)):

    • The gate threshold voltage is typically in the range of 1V to 3V, which allows for easy interfacing with low-voltage control signals.
  6. Package Type:

    • The SI2318A-TP is available in a compact SOT-23 package, which is ideal for space-constrained applications. The small footprint allows for efficient PCB layout and design.
  7. Thermal Characteristics:

    • The device has a thermal resistance that allows it to operate effectively under various thermal conditions, ensuring reliability in high-temperature environments.
  8. Applications:

    • Common applications include DC-DC converters, load switching, motor control, and other power management tasks in consumer electronics, automotive, and industrial applications.

Electrical Characteristics:

  • Maximum Drain-Source Voltage (V_DS): 30V
  • Continuous Drain Current (I_D): 6.9A
  • Gate-Source Voltage (V_GS): ±20V
  • On-Resistance (R_DS(on)): 0.045Ω at V_GS = 10V
  • Gate Threshold Voltage (V_GS(th)): 1V to 3V

Conclusion:

The SI2318A-TP from Micro Commercial Components is a versatile and efficient N-channel MOSFET that is well-suited for a variety of electronic applications. Its low on-resistance, compact package, and robust electrical characteristics make it an excellent choice for designers looking to optimize performance in power management and switching applications.

Alternatives

Functional Equivalent (FE) materials, including Fused Filament Fabrication (FFF) form, assembly, and functionally compatible substitute materials.

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