SI2319CDS-T1-GE3
- Manufacturer's Part No.:SI2319CDS-T1-GE3
- Manufacturer:
- Categories:
- Sub-Categories:
- Series:TrenchFET®
- Description:MOSFET P-CH 40V 4.4A SOT-23
- Datasheet:
- Quantity:Buy NowAdd to Cart
- Payment:
- Delivery:
- In Stock: 10000
- Available: 414489
Reference Price(In US Dollars)
Qty | Unit Price | Ext.Price |
---|---|---|
1+ | US $0.55770 | US $0.56 |
10+ | US $0.37180 | US $3.72 |
30+ | US $0.27885 | US $8.37 |
100+ | US $0.22308 | US $22.31 |
500+ | US $0.20449 | US $102.25 |
1000+ | US $0.18590 | US $185.90 |
Do you want a lower wholesale price? Please send us an inquiry, and we will respond immediately.
Product Parameter
- ManufacturerVishay
- Manufacturer's Part No.SI2319CDS-T1-GE3
- CategoriesDiscrete Semiconductor Products
- Sub-CategoriesTransistors - FETs, MOSFETs - Single
- SeriesTrenchFET®
- Time@Peak Reflow Temperature-Max (s)30
- Package / CaseTO-236-3, SC-59, SOT-23-3
- Part StatusActive
- Operating Temperature-55°C~150°C TJ
- Factory Lead Time14 Weeks
- MountSurface Mount
- Number of Pins3
- PackagingTape & Reel (TR)
- SubcategoryOther Transistors
- Number of Terminations3
- Terminal PositionDUAL
- Terminal FormGULL WING
- Peak Reflow Temperature (Cel)260
- Pin Count3
- Number of Elements1
- Lead FreeLead Free
- Radiation HardeningNo
- Published2013
- Pbfree Codeyes
- Contact PlatingTin
- Height1.12mm
- Length3.04mm
- Width1.4mm
- Weight1.437803g
- Mounting TypeSurface Mount
- Transistor Element MaterialSILICON
- Element ConfigurationSingle
- Transistor ApplicationSWITCHING
- Power Dissipation1.25W
- Max Junction Temperature (Tj)150°C
- Number of Channels1
- TechnologyMOSFET (Metal Oxide)
- Power Dissipation-Max1.25W Ta 2.5W Tc
- Turn On Delay Time40 ns
- Turn-Off Delay Time18 ns
- Operating ModeENHANCEMENT MODE
- Drain to Source Voltage (Vdss)40V
- Continuous Drain Current (ID)-4.4A
- Resistance77mOhm
- Gate to Source Voltage (Vgs)20V
- Drain to Source Breakdown Voltage-40V
- Threshold Voltage-2.5V
- FET TypeP-Channel
- Vgs(th) (Max) @ Id2.5V @ 250μA
- Input Capacitance (Ciss) (Max) @ Vds595pF @ 20V
- Gate Charge (Qg) (Max) @ Vgs21nC @ 10V
- Vgs (Max)±20V
- Nominal Vgs-1.2 V
- Current - Continuous Drain (Id) @ 25°C4.4A Tc
- Drive Voltage (Max Rds On,Min Rds On)4.5V 10V
- Rds On (Max) @ Id, Vgs77m Ω @ 3.1A, 10V
Environmental & Export Classifications
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- ECCN CodeEAR99
- RoHS StatusROHS3 Compliant
- JESD-609 Codee3
- REACH SVHCUnknown
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