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SI2333CDS-T1-GE3

  • In Stock: 205800
  • Available: 2745

Reference Price(In US Dollars)

QtyUnit PriceExt.Price
1+US $0.12600US $0.13
10+US $0.08400US $0.84
30+US $0.06300US $1.89
100+US $0.05040US $5.04
500+US $0.04620US $23.10
1000+US $0.04200US $42.00

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Description

The SI2333CDS-T1-GE3 is a P-channel enhancement-mode MOSFET transistor designed for low-voltage, high-speed switching applications.

Key Features:

  • Drain-Source Voltage (VDS): -12V
  • Continuous Drain Current (ID): -2.4A
  • Drain-Source On-State Resistance (RDS(on)): 65mΩ
  • Gate-Source Voltage (VGS): ±8V
  • Low threshold voltage (VGS(th)): -0.45V to -1.15V
  • Fast switching speed
  • Low gate charge
  • ESD Protection: 2kV (HBM)
  • Package: SOT-23

Applications:

  • Battery management
  • Power management in portable devices
  • Load switching
  • DC-DC converters
  • Small signal switching
Alternatives

Functional Equivalent (FE) materials, including Fused Filament Fabrication (FFF) form, assembly, and functionally compatible substitute materials.

SHIPPING GUIDE

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