SI3850ADV-T1-GE3
- Manufacturer's Part No.:SI3850ADV-T1-GE3
- Manufacturer:
- Categories:
- Sub-Categories:
- Series:TrenchFET®
- Description:MOSFET N/P-CH 20V 1.4A 6-TSOP
- Datasheet:
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- Available: 13731
Reference Price(In US Dollars)
Qty | Unit Price | Ext.Price |
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1+ | US $0.00000 | US $0.00 |
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Product Parameter
- ManufacturerVishay
- Manufacturer's Part No.SI3850ADV-T1-GE3
- CategoriesDiscrete Semiconductor Products
- Sub-CategoriesTransistors - FETs, MOSFETs - Arrays
- SeriesTrenchFET®
- ECCNEAR99
- MountSurface Mount
- FET TypeN and P-Channel, Common Drain
- PackagingTape & Reel (TR)
- Pin Count6
- FET FeatureLogic Level Gate
- Part StatusObsolete
- Pbfree Codeyes
- SubcategoryOther Transistors
- REACH StatusREACH Unaffected
- Mounting TypeSurface Mount
- Terminal FormGULL WING
- FET TechnologyMETAL-OXIDE SEMICONDUCTOR
- Number of Pins6
- Operating ModeENHANCEMENT MODE
- Package / CaseSOT-23-6 Thin, TSOT-23-6
- Terminal FinishPURE MATTE TIN
- Base Part NumberSI3850
- Power Dissipation1.06W
- Threshold Voltage1.5V
- Number of Elements2
- Vgs(th) (Max) @ Id1.5V @ 250μA
- Radiation HardeningNo
- Element ConfigurationDual
- Max Power Dissipation1.08W
- Operating Temperature-55°C~150°C TJ
- Polarity/Channel TypeN-CHANNEL AND P-CHANNEL
- Number of Terminations6
- Rds On (Max) @ Id, Vgs300m Ω @ 500mA, 4.5V
- Reflow Temperature-Max (s)30
- Transistor Element MaterialSILICON
- Gate Charge (Qg) (Max) @ Vgs1.4nC @ 4.5V
- Gate to Source Voltage (Vgs)12V
- Continuous Drain Current (ID)1.4A
- Peak Reflow Temperature (Cel)260
- Drain-source On Resistance-Max0.41Ohm
- Drain to Source Breakdown Voltage20V
- Current - Continuous Drain (Id) @ 25°C1.4A 960mA
Environmental & Export Classifications
- HTSUS8541.29.0095
- ECCN CodeEAR99
- REACH SVHCUnknown
- RoHS StatusROHS3 Compliant
- JESD-609 Codee3
- Moisture Sensitivity Level (MSL)1 (Unlimited)
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