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SI3911DV-T1-E3

  • Available: 11364

Reference Price(In US Dollars)

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Product Parameter

  • Manufacturer
    Vishay
  • Manufacturer's Part No.
    SI3911DV-T1-E3
  • Categories
    Discrete Semiconductor Products
  • Sub-Categories
    Transistors - FETs, MOSFETs - Arrays
  • Series
    TrenchFET®
  • Time@Peak Reflow Temperature-Max (s)
    40
  • Package / Case
    SOT-23-6 Thin, TSOT-23-6
  • Part Status
    Obsolete
  • Mount
    Surface Mount
  • Number of Pins
    6
  • Packaging
    Cut Tape (CT)
  • Subcategory
    Other Transistors
  • Base Part Number
    SI3911
  • Number of Terminations
    6
  • Terminal Finish
    Matte Tin (Sn)
  • Terminal Form
    GULL WING
  • Peak Reflow Temperature (Cel)
    260
  • Pin Count
    6
  • Number of Elements
    2
  • Lead Free
    Lead Free
  • Radiation Hardening
    No
  • Published
    2013
  • Pbfree Code
    yes
  • Max Operating Temperature
    150°C
  • Min Operating Temperature
    -55°C
  • Max Power Dissipation
    830mW
  • Mounting Type
    Surface Mount
  • Element Configuration
    Dual
  • Power Dissipation
    830mW
  • Turn On Delay Time
    12 ns
  • Turn-Off Delay Time
    24 ns
  • Operating Mode
    ENHANCEMENT MODE
  • Drain Current-Max (Abs) (ID)
    1.8A
  • DS Breakdown Voltage-Min
    20V
  • FET Technology
    METAL-OXIDE SEMICONDUCTOR
  • Drain to Source Voltage (Vdss)
    20V
  • Continuous Drain Current (ID)
    -2.2A
  • Resistance
    145mOhm
  • Gate to Source Voltage (Vgs)
    8V
  • FET Type
    2 P-Channel (Dual)
  • Vgs(th) (Max) @ Id
    450mV @ 250μA (Min)
  • Gate Charge (Qg) (Max) @ Vgs
    7.5nC @ 4.5V
  • FET Feature
    Logic Level Gate
  • Rise Time
    29ns
  • Fall Time (Typ)
    29 ns
  • Current - Continuous Drain (Id) @ 25°C
    1.8A
  • Rds On (Max) @ Id, Vgs
    145m Ω @ 2.2A, 4.5V

Environmental & Export Classifications

  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • ECCN Code
    EAR99
  • RoHS Status
    ROHS3 Compliant
  • JESD-609 Code
    e3

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