SI4154DY-T1-GE3
- Manufacturer's Part No.:SI4154DY-T1-GE3
- Manufacturer:
- Categories:
- Sub-Categories:
- Series:TrenchFET®
- Description:MOSFET N-CH 40V 36A 8-SOIC
- Datasheet:
- Quantity:Buy NowAdd to Cart
- Payment:
- Delivery:
- In Stock: 14673
- Available: 132616
Reference Price(In US Dollars)
Qty | Unit Price | Ext.Price |
---|---|---|
1+ | US $1.54500 | US $1.55 |
10+ | US $1.03000 | US $10.30 |
30+ | US $0.77250 | US $23.17 |
100+ | US $0.61800 | US $61.80 |
500+ | US $0.56650 | US $283.25 |
1000+ | US $0.51500 | US $515.00 |
Do you want a lower wholesale price? Please send us an inquiry, and we will respond immediately.
- Description
- Alternatives
- Shopping Guide
The SI4154DY-T1-GE3 is a high-performance, low-voltage, dual N-channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) manufactured by Vishay. This component is designed for a variety of applications, including power management, switching, and amplification in electronic circuits.
Key Features:
-
Configuration: The SI4154DY-T1-GE3 features a dual N-channel configuration, which means it contains two N-channel MOSFETs in a single package. This allows for efficient use of space on a circuit board and simplifies design for applications requiring multiple switching elements.
-
Package Type: It is housed in a compact SO-8 (Small Outline 8-lead) package, which is surface-mountable. This package type is ideal for automated assembly processes and helps in saving board space.
-
Voltage and Current Ratings: The device typically supports a maximum drain-source voltage (V_DS) of around 30V, making it suitable for low to moderate voltage applications. The continuous drain current (I_D) rating is approximately 4.5A, allowing it to handle significant loads in power applications.
-
R_DS(on): One of the critical specifications of the SI4154DY-T1-GE3 is its low on-resistance (R_DS(on)), which is typically around 10 mΩ at a gate-source voltage (V_GS) of 10V. This low on-resistance contributes to reduced power losses and improved efficiency in switching applications.
-
Gate Threshold Voltage (V_GS(th)): The gate threshold voltage is typically in the range of 1V to 2.5V, which allows for easy interfacing with low-voltage control signals.
-
Thermal Performance: The device is designed to operate efficiently at elevated temperatures, with a maximum junction temperature (T_J) rating of 150°C. This makes it suitable for applications where heat dissipation is a concern.
-
Applications: The SI4154DY-T1-GE3 is commonly used in various applications, including:
- Power management circuits
- DC-DC converters
- Load switching
- Motor control
- Battery management systems
-
Environmental Compliance: The component is RoHS compliant, indicating that it is free from hazardous substances and meets environmental regulations.
Summary:
The SI4154DY-T1-GE3 from Vishay is a versatile and efficient dual N-channel MOSFET that is well-suited for a range of electronic applications. Its low on-resistance, compact package, and robust electrical characteristics make it an excellent choice for designers looking to optimize performance and efficiency in their circuits.
Functional Equivalent (FE) materials, including Fused Filament Fabrication (FFF) form, assembly, and functionally compatible substitute materials.
SHIPPING GUIDE
Shipping Methods
Rest assured that your orders will be handled by these trusted providers, such as DHL, FedEx, SF, and UPS.
Shipping Cost
Shipping starts at $40 but varies for destinations like South Africa, Brazil, India, and more. The actual shipping charges depend on time zone, country, and package weight/volume.
Delivery Time
We ship orders once daily, around 5 p.m., except on Sundays. The estimated delivery time may vary depending on the courier service you choose, but typically ranges from 5 to 7 business days.
Professional Platform
Full-speed Delivery
Wide Variety of Products
365 Days of Quality Assurance