SI4226DY-T1-E3
- Manufacturer's Part No.:SI4226DY-T1-E3
- Manufacturer:
- Categories:
- Sub-Categories:
- Series:TrenchFET®
- Description:MOSFET 2N-CH 25V 8A 8SOIC
- Datasheet:
- Quantity:RFQAdd to RFQ List
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- Available: 11269
Reference Price(In US Dollars)
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Product Parameter
- ManufacturerVishay
- Manufacturer's Part No.SI4226DY-T1-E3
- CategoriesDiscrete Semiconductor Products
- Sub-CategoriesTransistors - FETs, MOSFETs - Arrays
- SeriesTrenchFET®
- ECCNEAR99
- MountSurface Mount
- Width4mm
- Height1.55mm
- Length5mm
- Weight186.993455mg
- FET Type2 N-Channel (Dual)
- PackagingTape & Reel (TR)
- Pin Count8
- Published2009
- Rise Time10ns
- FET FeatureStandard
- Part StatusObsolete
- Pbfree Codeyes
- REACH StatusREACH Unaffected
- Mounting TypeSurface Mount
- Terminal FormGULL WING
- FET TechnologyMETAL-OXIDE SEMICONDUCTOR
- Number of Pins8
- Operating ModeENHANCEMENT MODE
- Package / Case8-SOIC (0.154, 3.90mm Width)
- Fall Time (Typ)8 ns
- Terminal FinishMATTE TIN
- Base Part NumberSI4226
- Power Dissipation2W
- Number of Elements2
- Turn On Delay Time14 ns
- Vgs(th) (Max) @ Id2V @ 250μA
- Radiation HardeningNo
- Turn-Off Delay Time30 ns
- Element ConfigurationDual
- Max Power Dissipation3.2W
- Operating Temperature-55°C~150°C TJ
- Number of Terminations8
- Rds On (Max) @ Id, Vgs19.5m Ω @ 7A, 4.5V
- Transistor ApplicationSWITCHING
- Reflow Temperature-Max (s)30
- Transistor Element MaterialSILICON
- Gate Charge (Qg) (Max) @ Vgs36nC @ 10V
- Gate to Source Voltage (Vgs)12V
- Continuous Drain Current (ID)7.5A
- Peak Reflow Temperature (Cel)260
- Drain-source On Resistance-Max0.0195Ohm
- Drain to Source Breakdown Voltage25V
- Input Capacitance (Ciss) (Max) @ Vds1255pF @ 15V
- Current - Continuous Drain (Id) @ 25°C8A
Environmental & Export Classifications
- HTSUS8541.29.0095
- ECCN CodeEAR99
- RoHS StatusROHS3 Compliant
- JESD-609 Codee3
- Moisture Sensitivity Level (MSL)1 (Unlimited)
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