SI4401DDY-T1-GE3

The SI4401DDY-T1-GE3 is a N-channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) manufactured by Vishay. This component is designed for high-efficiency power management applications, making it suitable for a variety of electronic devices and systems.

Key Features:

1. Type: N-channel MOSFET
2. Package: The device comes in a compact SO-8 (Small Outline) package, which is surface-mountable, allowing for efficient use of PCB space and facilitating automated assembly processes.
3. Voltage Rating: The SI4401DDY-T1-GE3 has a maximum drain-source voltage (V_DS) rating of 30V, making it suitable for low to moderate voltage applications.
4. Current Rating: It can handle a continuous drain current (I_D) of up to 20A, which is beneficial for applications requiring significant power handling.
5. R_DS(on): The on-resistance (R_DS(on)) is low, typically around 10 mΩ at a gate-source voltage (V_GS) of 10V. This low on-resistance contributes to reduced power losses and improved efficiency during operation.
6. Gate Threshold Voltage: The gate threshold voltage (V_GS(th)) is in the range of 1V to 3V, allowing for easy drive with low-voltage control signals.
7. Thermal Characteristics: The device has a thermal resistance (RθJA) that allows for effective heat dissipation, which is crucial for maintaining performance and reliability in high-power applications.
8. Applications: Common applications include DC-DC converters, power management systems, motor drivers, and other switching applications where efficiency is critical.

Electrical Characteristics:

• Maximum Gate-Source Voltage (V_GS): ±20V
• Maximum Pulsed Drain Current (I_D, pulsed): Up to 40A
• Body Diode Characteristics: The device features an intrinsic body diode, which provides additional functionality in applications requiring reverse current flow.

Reliability and Compliance:

The SI4401DDY-T1-GE3 is designed to meet various industry standards for reliability and performance. It is RoHS compliant, ensuring that it is free from hazardous substances, making it suitable for environmentally conscious designs.

Conclusion:

The SI4401DDY-T1-GE3 from Vishay is a versatile and efficient N-channel MOSFET that is well-suited for a range of power management applications. Its combination of low on-resistance, high current handling capability, and compact packaging makes it an excellent choice for designers looking to optimize performance in their electronic circuits.